Datasheet
SGLS318 − NOVEMBER 2005
2
www.ti.com
BLOCK DIAGRAM
UDG−03110
10
11
6
8
15
1
16
ENA
VSENSE
IAC
VRMS
VCC
GND
GTDRV
2.65 V / 2.15 V
3 V
7
VAO
13
SS
X
2
A
B
C
(A) 16 V / 10 V
(B) 10.5 V / 10 V
5
MOUT
4
ISENSE
3
CAO
14
CT
OSC
12
RSET
SQ
R
R
2
PKLMT
20 V
IC
POWER
7.5 V REF
9
REF
RUN
7.1 V
RUN
V
CC
14 µA
I
MOUT
+
A B
C
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range unless otherwise noted
(1)
UCX854A, UCX854B UNIT
Supply voltage, V
CC
22 V
GTDRV current, I
GTDRV
Continuous 0.5 A
GTDRV Current, I
GTDRV
50% duty cycle 1.5 A
Input voltage
VSENSE, VRMS
,
ISENSE MOUT 11 V
Input voltage
PKLMT 5 V
Input current RSET, IAC, PKLMT, ENA 10 mA
Junction temperature, T
J
−55 to 150
Storage temperature, T
stg
−65 to 150
°C
Lead temperature, T
sol,
1,6 mm (1/16 inch) from case for 10 seconds 300
C
(1)
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only,
and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is
not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltages are with respect to
GND. Currents are positive into and negative out of, the specified terminal. ENA input is internally clamped to approximately 10 V.
RECOMMENDED OPERATING CONDITIONS
MIN MAX UNIT
Supply voltage, V
CC
10 20 V
Operating junction temperature, T
J
−55 125 °C