Datasheet

UC1835 UC1836
UC2835 UC2836
UC3835 UC3836
EQUATIONS:
R
1 = 0.100 V/IOUT (MAX)
R
2 = (VOUT - 2.5V/1mA)
R
3 = ((VIN - VBE - VSAT)*BETA(min))/IOUT (max)
UC3835/36 TYPICAL APPLICATIONS
Low Current Application
using the UC3836 internal drive transistor
Typical Output Current vs VIN and VOUT
of the UC3836 internal drive transistor
for P
DISS = 0.5W (approx.)
High Current Application
using drive transistor Q2 to increase Q1 base drive
and reduce UC3836 power dissipation
Parallel Pass Transistors
can be added for high current or
high power dissipation applications
UNITRODE INTEGRATED CIRCUITS
7 CONTINENTAL BLVD. • MERRIMACK, NH 03054
TEL. [phone] • FAX [phone]
APPLICATION AND OPERATION INFORMATION (cont.)
UC1835/6 Foldback Current Limiting
4