Datasheet

E4
A4
B4
D4
DAT1B
DAT2B
DAT3B
CMDB
CMDB
CLKB
DAT0B
VCCA
DAT0A
DAT1A
DAT2A
DAT3A
CMDA
CLKA
CLK-f
GND
GND
VCCB
DAT0B
DAT1B
DAT2B
DAT3B
CMDB
CLKB
VDDA
DAT0
DAT1
DAT2
DAT3
CMD
CLK
CLKin
GND
CD
VSS
A2
D1
E1
A1
B1
C1
D2
E2
C2
C3
V
CCA
V
CCB
Memory Stick
Controller
™
TXS0206
C3
0.1 µF
C4
0.1 µF
C1
0.1 µF
V
CCB
U1A U2
B3
C4
D3
Memory Stick™
Connector
CD
CD
B2
VCC
SCLK
DATA3 (see Note)
INS
DATA2 (see Note)
DATA0/SDIO (see Note)
DATA1 (see Note)
BS
VSS
1
DAT1B
2
DAT0B
3
DAT2B
4
CD
5
DAT3B
6
CLKB
7
8
9
10
TXS0206
www.ti.com SCES697C –AUGUST 2009–REVISED JANUARY 2010
NOTE: The TXS0206 has integrated pullup resistor values that dynamically change value depending on whether a low or
high signal is being transmitted through the device. When the output is low, the TXS0206 internal pullup value is
40 kΩ, and when the output is high, the internal pullup value change to a value of 4 kΩ. For MSA and MSH Memory
Stick™ memory cards, to ensure that a valid V
IH
(i.e., receiver input voltage high) is achieved, the internal pulldown
resistors for these memory cards are not smaller than a 10-kΩ value. See the Application Information section of this
data sheet, which explains the impact of adding too heavy (i.e., <10-kΩ value) of a pulldown resistor to the data lines
of the TXS0206 device and the resulting 4-kΩ pullup/10-kΩ pulldown voltage divider network, which has a direct
impact on the V
IH
of the signal being sent into the Memory Stick™.
Figure 2. Interfacing With Memory Stick™ Card
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Product Folder Link(s): TXS0206