Datasheet

"#$%&'
SBAS417B − JUNE 2007 − REVISED JANUARY 2008
www.ti.com
8
TYPICAL CHARACTERISTICS (continued)
At T
A
= +25°C, +V
CC
= +2.7V, IOVDD = +1.8V, V
REF
= External +2.5V, 12-bit mode, PD0 = 0, f
SAMPLE
= 125kHz, and f
CLK
= 16 • f
SAMPLE
= 2MHz,
unless otherwise noted.
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
Max Absolute Delta Error from
R
IN
=0(LSB)
20 40 60 80 100 120 140 160 180 200
Sampling Rate (kHz)
MAXIMUM SAMPLING RATE vs R
IN
INL: R
IN
= 500
Ω
INL: R
IN
=2k
Ω
DNL: R
IN
= 500
Ω
DNL: R
IN
=2k
Ω
INTERNAL V
REF
vs TEMPERATURE
−
40
−
35
−
30
−
25
−
20
−
15
−
10
−
5
0 5
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85
Internal V
REF
(V)
2.5080
2.5075
2.5070
2.5065
2.5060
3.5055
2.5050
2.5045
2.5040
2.5035
2.5030
Temperature (°C)
INTERNAL V
REF
vs +V
CC
2.53.03.54.04.55.0
+V
CC
(V)
Internal V
REF
(V)
2.510
2.505
2.500
2.495
2.490
2.485
2.480
INTERNAL V
REF
vs TURN− ON TIME
0 200 400 600 800 1000 1200 1400
Internal V
REF
(%)
100
80
60
40
20
0
Turn-On Time (µs)
1µF Cap
(124µs)
12-Bit Settling
No Cap
(42µs)
12-Bit Settling
TEMP DIODE VOLTAGE vs TEMPERATURE
−
40
−
35
−
30
−
25
−
20
−
15
−
10
−
5
0 5
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85
TEMP Diode Voltage (mV)
850
800
750
700
650
600
550
500
450
90.1mV
135.1mV
TEMP1
TEMP0
Temperature (°C)
TEMP0 DIODE VOLTAGE vs +V
CC
2.7 3.0 3.3
+V
CC
(V)
TEMP0 Diode Voltage (mV)
604
602
600
598
596
594