Datasheet
ELECTRICAL CHARACTERISTICS
TSC2008
www.ti.com
.......................................................................................................................................................... SBAS406B – JUNE 2008 – REVISED MARCH 2009
At T
A
= – 40 ° C to +85 ° C, V
DD
= +1.2V to +3.6V, unless otherwise noted.
TSC2008
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
AUXILIARY ANALOG INPUT
Input voltage range 0 V
DD
V
Input capacitance 12 pF
Input leakage current – 1 +1 µ A
A/D CONVERTER
Resolution Programmable: 8 or 12 bits 12 Bits
No missing codes 12-bit resolution 11 Bits
Integral linearity ± 1.5 LSB
(1)
Differential linearity ± 1 LSB
V
DD
= 1.8V – 1.2 LSB
Offset error
V
DD
= 3.0V – 3.1 LSB
V
DD
= 1.8V 0.7 LSB
Gain error
V
DD
= 3.0V 0.1 LSB
TOUCH SENSORS
T
A
= +25 ° C, V
DD
= 1.8V, setup command ' 10100000 ' 50 k Ω
PENIRQ pull-up resistor, R
IRQ
T
A
= +25 ° C, V
DD
= 1.8V, setup command ' 10101000 ' 90 k Ω
Y+, X+ 6 Ω
Switch
on-resistance
Y – , X – 5 Ω
Switch drivers drive current
(2)
100ms duration 50 mA
INTERNAL TEMPERATURE SENSOR
Temperature range – 40 +85 ° C
V
DD
= 3V 1.94 ° C/LSB
Differential
method
(3)
V
DD
= 1.6V 1.04 ° C/LSB
Resolution
V
DD
= 3V 0.35 ° C/LSB
TEMP1
(4)
V
DD
= 1.6V 0.19 ° C/LSB
V
DD
= 3V ± 2 ° C/LSB
Differential
method
(3)
V
DD
= 1.6V ± 2 ° C/LSB
Accuracy
V
DD
= 3V ± 3 ° C/LSB
TEMP1
(4)
V
DD
= 1.6V ± 3 ° C/LSB
INTERNAL OSCILLATOR
V
DD
= 1.2V 3.19 MHz
V
DD
= 1.8V 3.66 MHz
8-bit
V
DD
= 2.7V 3.78 MHz
V
DD
= 3.6V 3.82 MHz
Internal clock frequency, f
CCLK
V
DD
= 1.2V 1.6 MHz
V
DD
= 1.8V 1.83 MHz
12-bit
V
DD
= 2.7V 1.88 MHz
V
DD
= 3.6V 1.91 MHz
V
DD
= 1.6V 0.0056 %/ ° C
Frequency drift
V
DD
= 3.0V 0.012 %/ ° C
(1) LSB means least significant bit. With V
DD
(REF) = +2.5V, 1LSB is 610 µ V.
(2) Assured by design, but not production tested. Exceeding 50mA source current may result in device degradation.
(3) Difference between TEMP1 and TEMP2 measurement; no calibration necessary.
(4) Temperature drift is – 2.1mV/ ° C.
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