Datasheet

TS5A3166
SCDS186B –FEBRUARY 2005–REVISED SEPTEMBER 2013 www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
Summary Of Characteristics
(1)
Single Pole
Configuration Single Throw
(SPST)
Number of channels 1
ON-state resistance (r
on
) 0.9 Ω
ON-state resistance flatness (r
on(flat)
) 0.15 Ω
Turn-on/turn-off time (t
ON
/t
OFF
) 7.5 ns/12.5 ns
Charge injection (Q
C
) 1 pC
Bandwidth (BW) 200 MHz
OFF isolation (O
ISO
) –64 dB at 1 MHz
Total harmonic distortion (THD) 0.005%
Leakage current (I
COM(OFF)
) ±20 nA
Power-supply current (I
+
) 0.5 μA
Package option 5-pin DSBGA, SOT-23, or SC-70
(1) V
+
= 5 V, T
A
= 25°C
FUNCTION TABLE
NO TO COM,
IN
COM TO NO
L OFF
H ON
Table 1. PIN DESCRIPTION
PIN NUMBER NAME DESCRIPTION
1 NO Normally closed
2 COM Common
3 GND Digital ground
4 IN Digital control pin to connect COM to NO
5 V
+
Power Supply
PARAMETER DESCRIPTION
SYMBOL DESCRIPTION
V
COM
Voltage at COM
V
NO
Voltage at NO
r
on
Resistance between COM and NO ports when the channel is ON
r
peak
Peak on-state resistance over a specified voltage range
r
on(flat)
Difference between the maximum and minimum value of r
on
in a channel over the specified range of conditions
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state under worst-case
I
NO(OFF)
input and output conditions
I
NO(PWROFF)
Leakage current measured at the NO port during the power-down condition, V
+
= 0
Leakage current measured at the COM port, with the corresponding channel (COM to NO) in the OFF state under worst-
I
COM(OFF)
case input and output conditions
I
COM(PWROFF)
Leakage current measured at the COM port during the power-down condition, V
+
= 0
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output
I
NO(ON)
(COM) open
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