Datasheet

TS5A23166
www.ti.com SCDS196G –MAY 2005–REVISED FEBRUARY 2013
Table 2. PIN DESCRIPTION
PIN NUMBER
NAME DESCRIPTION
DCU YZT or YZP
1 A1 NO1 Normally open
2 B1 COM1 Common
3 C1 IN2 Digital control pin to connect COM to NO
4 D1 GND Digital ground
5 D2 NO2 Normally open
6 C2 COM2 Common
7 B2 IN1 Digital control pin to connect COM to NO
8 A2 V
+
Power Supply
Table 3. PARAMETER DESCRIPTION
SYMBOL DESCRIPTION
V
COM
Voltage at COM
V
NO
Voltage at NO
r
on
Resistance between COM and NO ports when the channel is ON
r
on(flat)
Difference between the maximum and minimum value of ron in a channel over the specified range of conditions
I
NO(OFF)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output
I
NO(ON)
(COM) open
I
COM(OFF)
Leakage current measured at the COM port, with the corresponding channel (COM to NO) in the OFF state
Leakage current measured at the COM port, with the corresponding channel (COM to NO) in the ON state and the output
I
COM(ON)
(NO) open
V
IH
Minimum input voltage for logic high for the control input (IN)
V
IL
Maximum input voltage for logic low for the control input (IN)
V
I
Voltage at the control input (IN)
I
IH
, I
IL
Leakage current measured at the control input (IN)
Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation
t
ON
delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning ON.
Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation
t
OFF
delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning OFF.
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NO or COM)
Q
C
output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the control
input.Charge injection, Q
C
= C
L
× ΔV
COM
, C
L
is the load capacitance and ΔV
COM
is the change in analog output voltage.
C
NO(OFF)
Capacitance at the NO port when the corresponding channel (NO to COM) is OFF
C
NO(ON)
Capacitance at the NO port when the corresponding channel (NO to COM) is ON
C
COM(OFF)
Capacitance at the COM port when the corresponding channel (COM to NO) is OFF
C
COM(ON)
Capacitance at the COM port when the corresponding channel (COM to NO) is ON
C
I
Capacitance of IN
OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific
O
ISO
frequency, with the corresponding channel (NO to COM) in the OFF state.
BW Bandwidth of the switch. This is the frequency in which the gain of an ON channel is –3 dB below the DC gain.
Total harmonic distortion is defined as the ratio of the root mean square (RMS) value of the second, third, and higher
THD
harmonics to the magnitude of fundamental harmonic.
I
+
Static power-supply current with the control (IN) pin at V
+
or GND
ΔI
+
This is the increase in I
+
for each control (IN) input that is at the specified voltage, rather than at V
+
or GND.
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