Datasheet

ELECTRICAL CHARACTERISTICS FOR 3.3-V SUPPLY
TS5A23157
www.ti.com ................................................................................................................................................................ SCDS165D – MAY 2004 – REVISED MAY 2008
V
+
= 3 V to 3.6 V, T
A
= – 40 ° C to 85 ° C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS T
A
V
+
MIN TYP
(1)
MAX UNIT
Analog Switch
V
COM
,
Analog signal range 0 V
+
V
V
NO
, V
NC
0 ≤ V
NO
or V
NC
≤ V
+
, Switch ON,
ON-state resistance r
on
Full 3 V 18 Ω
I
COM
= – 24 mA, See Figure 10
ON-state resistance
V
NO
or V
NC
= 2.1 V, Switch ON,
match between Δ r
on
25 ° C 3 V 0.2 Ω
I
COM
= – 24 mA, See Figure 10
channels
ON-state resistance 0 ≤ V
NO
or V
NC
≤ V
+
, Switch ON,
r
on(flat)
25 ° C 3 V 9 Ω
flatness I
COM
= – 24 mA, See Figure 12
25 ° C – 1 0.05 1
NC, NO I
NC(OFF)
, V
NC
or V
NO
= 0 to V
+
, Switch OFF,
3.6 V µ A
OFF leakage current I
NO(OFF)
V
COM
= 0 to V
+
, See Figure 11
Full – 1 1
25 ° C – 0.1 0.1
NC, NO I
NC(ON)
, V
NC
or V
NO
= 0 to V
+
, Switch ON,
3.6 V µ A
ON leakage current I
NO(ON)
V
COM
= Open, See Figure 11
Full – 1 1
25 ° C – 0.1 0.1
COM V
NC
or V
NO
= Open, Switch ON,
I
COM(ON)
3.6 V µ A
ON leakage current V
COM
= 0 to V
+
, See Figure 11
Full – 1 1
Digital Inputs (IN12, IN2)
(2)
V
+
Input logic high V
IH
Full V
× 0.7
V
+
Input logic low V
IL
Full V
× 0.3
25 ° C – 1 0.05 1
Input leakage current I
IH
, I
IL
V
IN
= 5.5 V or 0 3.6 V µ A
Full – 1 1
Dynamic
V
NC
= GND and V
NO
= V
+
R
L
= 500 Ω ,
3 V to
Turn-on time t
ON
or C
L
= 50 pF, Full 2.5 7.6 ns
3.6 V
V
NC
= V
+
and V
NO
= GND, See Figure 13
V
NC
= GND and V
NO
= V
+
R
L
= 500 Ω ,
3 V to
Turn-off time t
OFF
or C
L
= 50 pF, Full 1.5 5.3 ns
3.6 V
V
NC
= V
+
and V
NO
= GND, See Figure 13
Break-before-make V
NC
= V
NO
= V
+
/2, C
L
= 35 pF, 3 V to
t
BBM
Full 0.5 ns
time R
L
= 50 Ω , See Figure 14 3.6 V
R
L
= 50 Ω ,
Charge injection Q
C
See Figure 18 25 ° C 3.3 V 3 pC
CL = 0.1 nF,
R
L
= 50 Ω ,
Bandwidth BW See Figure 15 25 ° C 3 V 220 MHz
Switch ON,
R
L
= 50 Ω , Switch OFF,
OFF isolation O
ISO
25 ° C 3 V – 65 dB
f = 10 MHz, See Figure 16
R
L
= 50 Ω , Switch ON,
Crosstalk X
TALK
25 ° C 3 V – 66 dB
f = 10 MHz, See Figure 17
f = 600 Hz to
Total harmonic R
L
= 600 Ω ,
THD 20 kHz, 25 ° C 3 V 0.015 %
distortion C
L
= 50 pF,
See Figure 19
Supply
25 ° C 1
Positive supply
I
+
V
IN
= V
+
or GND, Switch ON or OFF 3.6 V µ A
current
Full 10
Change in
Δ I
+
V
IN
= V
+
– 0.6 V Full 3.6 V 500 µ A
supply current
(1) T
A
= 25 ° C
(2) All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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