Datasheet
TS3A5017
www.ti.com
.......................................................................................................................................... SCDS188D – JANUARY 2005 – REVISED DECEMBER 2008
PARAMETER DESCRIPTION
SYMBOL DESCRIPTION
V
D
Voltage at D
V
NC
Voltage at S
r
on
Resistance between D and S ports when the channel is ON
Δ r
on
Difference of r
on
between channels in a specific device
r
on(flat)
Difference between the maximum and minimum value of r
on
in a channel over the specified range of conditions
I
S(OFF)
Leakage current measured at the S port, with the corresponding channel (S to D) in the OFF state
I
SPWR(OFF)
Leakage current measured at the S port under the powered down mode, V
+
= 0
I
S(ON)
Leakage current measured at the S port, with the corresponding channel (S to D) in the ON state and the output (D) open
I
D(OFF)
Leakage current measured at the D port, with the corresponding channel (D to S) in the OFF state
I
DPWR(OFF)
Leakage current measured at the D port under the powered down mode, V
+
= 0
I
D(ON)
Leakage current measured at the D port, with the corresponding channel (D to S) in the ON state and the output (S) open
V
IH
Minimum input voltage for logic high for the control input (IN, EN)
V
IL
Maximum input voltage for logic low for the control input (IN, EN)
V
I
Voltage at the control input (IN, EN)
I
IH
, I
IL
Leakage current measured at the control input (IN, EN)
Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation
t
ON
delay between the digital control (IN) signal and analog output (D or S) signal when the switch is turning ON.
Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation
t
OFF
delay between the digital control (IN) signal and analog output (D or S) signal when the switch is turning OFF.
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (S or D) output.
Q
C
This is measured in coulomb (C) and measured by the total charge induced due to switching of the control input. Charge
injection, Q
C
= C
L
× Δ V
D
, C
L
is the load capacitance and Δ V
D
is the change in analog output voltage.
C
S(OFF)
Capacitance at the S port when the corresponding channel (S to D) is OFF
C
S(ON)
Capacitance at the S port when the corresponding channel (S to D) is ON
C
D(OFF)
Capacitance at the D port when the corresponding channel (D to S) is OFF
C
D(ON)
Capacitance at the D port when the corresponding channel (D to S) is ON
C
I
Capacitance of control input (IN)
OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific
O
ISO
frequency, with the corresponding channel (S to D) in the OFF state.
Crosstalk is a measurement of unwanted signal coupling from an ON channel to an OFF channel (1S
1
to 2S
1
). This is
X
TALK
measured in a specific frequency and in dB.
BW Bandwidth of the switch. This is the frequency in which the gain of an ON channel is – 3 dB below the DC gain.
Total harmonic distortion describes the signal distortion caused by the analog switch. This is defined as the ratio of root
THD mean square (RMS) value of the second, third, and higher harmonic to the absolute magnitude of the fundamental
harmonic.
I
+
Static power-supply current with the control (IN) pin at V
+
or GND
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