Datasheet

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ELECTRICAL CHARACTERISTICS
TPS75801 , , TPS758A01
TPS75815 , TPS75818
TPS75825 , TPS75833
SLVS330F – JUNE 2001 – REVISED APRIL 2007
Over recommended operating junction temperature range (T
J
= –40 ° C to +125 ° C), V
IN
= V
OUT(nom)
+ 1V, I
OUT
= 1mA,
V
EN
= V
IN
, C
OUT
= 100 µ F (unless otherwise noted). Typical values are at T
J
= +25 ° C.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
IN
Input voltage range
(1)
2.8 5.5 V
TPS75801 1.225 V
V
REF
Reference voltage
TPS758A01 1.24 V
Output voltage range V
REF
5 V
V
OUT
TPS75801 V
OUT
+ 1V ≤ V
IN
≤ 5.5V, 1mA ≤ I
OUT
≤ 3A –3 +3 %
Accuracy
(1)
TPS758A01 V
OUT
+ 1V ≤ V
IN
≤ 5.5V, 1mA ≤ I
OUT
≤ 3A –3 +3 %
∆ V
OUT
%/ ∆ V
IN
Line regulation
(1)
V
OUT
+ 1V ≤ V
IN
< 5.5V 0.04 0.1 %/V
∆ V
OUT
%/ ∆ I
OUT
Load regulation 1mA ≤ I
OUT
≤ 3A 0.15 %
V
DO
Dropout voltage
(2)
V
IN
= 3.2V, I
OUT
= 3A 150 300 mV
I
CL
Output current limit V
OUT
= 0V 5.5 10 14 A
I
GND
Ground pin current 1mA ≤ I
OUT
≤ 3A 125 200 µ A
I
SHDN
Shutdown current (I
GND
) V
EN
= 0V 0.1 3 µ A
I
FB
FB pin current FB = 1.5V –1 1 µ A
Power-supply rejection ratio
PSRR f = 100Hz, V
IN
= 2.8V, V
OUT
= 1.5V, I
OUT
= 3A 62 dB
(ripple rejection)
V
N
Output noise voltage BW = 300Hz to 50kHz, V
IN
= 2.8V, V
OUT
= 1.5V 35 µ V
RMS
V
EN
(HI) Enable high (enabled) 2 V
V
EN
(LO) Enable low (shutdown) 0.7 V
V
EN
= V
IN
–1 1 µ A
I
EN
(HI) Enable pin current (enabled)
V
EN
= 0V –1 0 1 µ A
Output discharge transistor current T
J
= +25 ° C, V
OUT
= 1.5V 10 25 mA
Undervoltage lockout T
J
= +25 ° C, V
IN
rising 2.2 2.75 V
UVLO
Hysteresis V
IN
falling 100 mV
T
SD
Thermal shutdown temperature +150 ° C
T
J
Operating junction temperature –40 +125 ° C
(1) Minimum V
IN
= V
OUT
+ V
DO
or 2.8V, whichever is greater.
(2) V
IN
= V
OUT(nom)
– 0.1V. V
DO
is not measured for devices with V
OUT(nom)
< 2.9V because minimum V
IN
= 2.8V.
3
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