Datasheet

       
    
 
SLVS306E − NOVEMBER 2000 − REVISED FEBRUARY 2009
9
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 6
75
100
125
150
−40 −25 −10 5 20 35 50 65 80 95 110 125
T
J
− Junction Temperature − °C
TPS757xx
GROUND CURRENT
vs
JUNCTION TEMPERATURE
Ground Current − Aµ
V
I
= 5 V
I
O
= 3 A
Figure 7
100k10k
PSRR − Power Supply Ripple Rejection − dB
f − Frequency − Hz
POWER SUPPLY RIPPLE REJECTION
vs
FREQUENCY
70
60
50
40
30
20
10
0
TPS75733
90
80
1k10010
1M
I
O
= 1 mA
I
O
= 3 A
10M
V
I
= 4.3 V
C
o
= 100 µF
T
J
= 25°C
Figure 8
0
0.5
1
1.5
2
2.5
I
O
= 3 A
I
O
= 1 mA
f − Frequency − Hz
1010 100 1k 10k 100k
V
I
= 4.3 V
V
O
= 3.3 V
C
o
= 100 µF
T
J
= 25°C
TPS75733
OUTPUT SPECTRAL NOISE DENSITY
vs
FREQUENCY
V/ HzOutput Spectral Noise Density − µ
Figure 9
TPS75733
OUTPUT IMPEDANCE
vs
FREQUENCY
f − Frequency − Hz
− Output Impedance −z
o
Ω
10 100 100k 1M
0.001
10k1k 10M
1
100
I
O
= 1 mA
0.01
0.1
10
I
O
= 3 A
0.0001
0.00001
V
I
= 4.3 V
C
o
= 100 µF
I
O
= 1 mA
T
J
= 25°C