Datasheet

       
    
 
SLVS293D − NOVEMBER 2000 − REVISED MAY 2002
7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics over recommended operating junction temperature range (T
J
= −40°C to
125°C), V
I
= V
O(typ)
+ 1 V, I
O
= 1 mA, EN = 0 V, C
O
= 100 µF (unless otherwise noted) (continued)
PARAMETER TEST CONDITIONS
MIN TYP MAX UNIT
Input current (EN)
EN = V
I
−1 1 µA
Input current (EN)
EN = 0 V −1 0 1 µA
High level EN input voltage 2 V
Low level EN input voltage 0.7 V
Dropout voltage, (3.3 V output) (see Note 4)
I
O
= 5 A, V
I
= 3.2 V, T
J
= 25°C 250
mV
V
O
Dropout voltage, (3.3 V output) (see Note 4)
I
O
= 5 A, V
I
= 3.2 V 500
mV
V
O
Discharge transistor current V
O
= 1.5 V, T
J
= 25°C 10 25 mA
V
I
UVLO T
J
= 25°C, V
I
rising 2.2 2.75 V
V
I
UVLO hysteresis T
J
= 25°C, V
I
falling 100 mV
NOTE 4: IN voltage equals V
O
(typ) − 100 mV; TPS75515, TPS75518, and TPS75525 dropout voltage limited by input voltage range limitations
(i.e., TPS75533 input voltage is set to 3.2 V for the purpose of this test).
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
V
O
Output voltage
vs Output current 2, 3
V
O
Output voltage
vs Junction temperature
4, 5
Ground current vs Junction temperature 6
Power supply ripple rejection vs Frequency 7
Output spectral noise density vs Frequency 8
z
o
Output impedance vs Frequency 9
V
DO
Dropout voltage
vs Input voltage 10
V
DO
Dropout voltage
vs Junction temperature
11
V
I
Minimum required input voltage vs Output voltage 12
Line transient response 13, 15
Load transient response 14, 16
V
O
Output voltage and enable voltage vs Time (start-up) 17
Equivalent series resistance vs Output current 19, 20