Datasheet

TPS7510x
www.ti.com SBVS080I –SEPTEMBER 2006–REVISED NOVEMBER 2013
ELECTRICAL CHARACTERISTICS
Over operating junction temperature range (T
J
= –40°C to +85°C), V
IN
= 3.8V, DxA and DxB = 3.3V, R
SET
= 32.4kΩ, and ENA
and ENB = 3.8V, unless otherwise noted. Typical values are at T
A
= +25°C.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
I
SHDN
Shutdown supply current V
ENA,B
= 0V, V
DX
= 0V 0.03 1.0 μA
I
DX
≤ 5mA, V
IN
= 3.8V 170 230 μA
DSK
package
I
DX
> 5mA, V
IN
= 3.8V 250 300 µA
I
GND
Ground current
I
DX
≤ 5mA, V
IN
= 4.5V 170 200 μA
YFF
package
I
DX
> 5mA, V
IN
= 4.5V 250 300 µA
T
A
= +25°C 0 2 4 %
YFF
Current matching 0 5 %
ΔI
D
package
(I
DXMAX
– I
DXMIN
/I
DXMAX
) × 100%
T
A
= –40°C to +85°C
DSK
0 6 %
package
ΔI
DX
%/ΔV
IN
Line regulation 3.5V ≤ V
IN
≤ 4.5V, I
DX
= 5mA 2.0 %/V
ΔI
DX
%/ΔV
DX
Load regulation 1.8V ≤ V
DX
≤ 3.5V, I
DX
= 5mA 0.8 %/V
Dropout voltage of any I
DXnom
= 5mA 28 100
V
DO
DX current source mV
I
DXnom
= 15mA 70
(V
DX
at I
DX
= 0.8 × I
DX, nom
)
V
ISET
Reference voltage for current set 1.183 1.225 1.257 V
YFF
0.5 3 %
package
I
SET
= open,
I
OPEN
Diode current accuracy
(1)
V
DX
= V
IN
– 0.2V
DSK
0.5 4 %
package
I
SET
I
SET
pin current range 2.5 62.5 μA
k I
SET
to I
DX
current ratio
(1)
420
V
IH
Enable high level input voltage 1.2 V
V
IL
Enable low level input voltage 0.4 V
V
ENA
= 3.8V 5.0 6.1
I
INA
Enable pin A (V
ENA
) input current μA
V
ENA
= 1.8V 2.2
V
ENB
= 3.8V 4.0 4.9
I
INB
Enable pin B (V
ENB
) input current μA
V
ENB
= 1.8V 1.8
Delay from ENA and ENB = low to
t
SD
Shutdown delay time reach shutdown current 5 13 30 μs
(I
DX
= 0.1 × I
DX, nom
)
Shutdown, temp increasing +165
T
SD
Thermal shutdown temperature °C
Reset, temp decreasing +140
(1) Average of all four I
DX
outputs.
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