Datasheet
TPS7510x
SBVS080I –SEPTEMBER 2006–REVISED NOVEMBER 2013
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ORDERING INFORMATION
(1)
PRODUCT ID OPTIONS
(2)
TPS7510x yyyz X is the nominal default diode output current (for example, 3 = 3mA, 5 = 5mA, and 0 = 10mA).
YYY is the package designator.
Z is the reel quantity (R = 3000, T = 250).
(1) For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
(2) Default set currents from 3mA to 10mA in 1mA increments are available through the use of innovative factory EEPROM programming.
Minimum order quantities may apply. Contact factory for details and availability.
ABSOLUTE MAXIMUM RATINGS
(1)
Over operating temperature range (unless otherwise noted).
PARAMETER VALUE
V
IN
range –0.3V to +7.0V
V
ISET
, V
ENA
, V
ENB
, V
DX
range –0.3V to V
IN
I
DX
for D1A, D2A, D1B, D2B 35mA
D1A, D2A, D1B, D2B short circuit duration Indefinite
Continuous total power dissipation Internally limited
Junction temperature (T
J
) –55°C to +150°C
Storage temperature –55°C to +150°C
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
DISSIPATION RATINGS
DERATING FACTOR
ABOVE
BOARD PACKAGE R
θJC
R
θJA
T
A
= +25°C T
A
< +25°C T
A
= +70°C T
A
= +85°C
Low-K
(1)
YFF 55°C/W 208°C/W 4.8mW/°C 480mW 264mW 192mW
YFF 55°C/W 142°C/W 7.0mW/°C 704mW 387mW 282mW
High-K
(2)
DSK 40°C/W 60.6°C/W 17mW/°C 1650mW 908mW 660mW
(1) The JEDEC low-K (1s) board used to derive this data was a 3 inch × 3 inch, two-layer board with 2 ounce copper traces on top of the
board.
(2) The JEDEC high-K (2s2p) board used to derive this data was a 3 inch × 3 inch, multi-layer board with 1 ounce internal power and
ground planes and 2 ounce copper traces on top and bottom of the board.
RECOMMENDED OPERATING CONDITIONS
PARAMETER MIN TYP MAX UNIT
V
IN
Input voltage 2.7 5.5 V
I
DX
Operating current per LED 3 25 mA
t
PWM
On-time for PWM signal 33 μs
T
J
Operating junction temperature range –40 +85 °C
2 Submit Documentation Feedback Copyright © 2006–2013, Texas Instruments Incorporated