Datasheet

TPS74801-Q1
SLVSAI4B –OCTOBER 2010–REVISED JULY 2013 www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ABSOLUTE MAXIMUM RATINGS
(1)
At T
A
= –40°C to 105°C (for TPS74801TDRCRQ1), T
A
= –40°C to 125°C (for TPS74801QRGWRQ1), unless otherwise noted.
All voltages are with respect to GND.
TPS74801-Q1 UNIT
V
IN
, V
BIAS
Input voltage range –0.3 to 6 V
V
EN
Enable voltage range –0.3 to 6 V
V
PG
Power good voltage range –0.3 to 6 V
I
PG
PG sink current 0 to 1.5 mA
V
SS
Soft-start voltage range –0.3 to 6 V
V
FB
Feedback voltage range –0.3 to 6 V
V
OUT
Output voltage range –0.3 to V
IN
+ 0.3 V
I
OUT
Maximum output current Internally limited
Output short-circuit duration Indefinite
P
DISS
Continuous total power dissipation See Thermal Information Table
T
J
Operating junction temperature range –40 to 150 °C
T
STG
Storage junction temperature range –55 to 150 °C
Electrostatic Human body model (HBM) classification level H2 2000 V
Discharge
Charged device model (CDM) classification level C4B 750 V
(ESD) Ratings
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these conditions is not implied. Exposure to absolute-maximum-rated conditions for
extended periods may affect device reliability.
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