Datasheet
1
0.1
0.01
100
1k 10k
OutputSpectralNoiseDensity(mV/Ö )Hz
Frequency(Hz)
100k
C =1nF
SS
C =0nF
SS
C =10nF
SS
I =3A
OUT
V =1.1V
OUT
1
0.1
0.01
100
1k 10k
OutputSpectralNoiseDensity( V/ )m ÖHz
Frequency(Hz)
100k
V =3.3V
OUT
V =2.5V
OUT
V =1.5V
OUT
V =1.1V
OUT
V =0.8V
OUT
V :V +1.62V
BIAS OUT
I :3A
OUT
C :1 F(Ceramic)m
IN
C :1 F(Ceramic)m
OUT
R ,R :(seeTable1)
1 2
2.85
2.65
2.45
2.25
2.05
1.85
1.65
1.45
1.25
0
500 1000 1500 2000 2500
BiasCurrent(mA)
I (mA)
OUT
3000
+125 C°
+25 C°
- °40 C
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
2.0
2.5 3.0 3.5 4.0 4.5
BiasCurrent(mA)
V (V)
BIAS
5.0
T =
J
+125 C°
T =+25 C°
J
T =
J
- °40 C
-40
-20 0 20 40 60 80 100
120
V =2.375V
BIAS
V =5.5V
BIAS
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
BiasCurrent( A)m
JunctionTemperature( C)°
TPS74401-EP
www.ti.com
SBVS122B –MARCH 2010–REVISED SEPTEMBER 2010
TYPICAL CHARACTERISTICS (continued)
At T
J
= +25°C, V
OUT
= 1.5 V, V
IN
= V
OUT(TYP)
+ 0.3 V, V
BIAS
= 3.3 V, I
OUT
= 50 mA, C
IN
= 1 mF, C
BIAS
= 1 mF, C
SS
= 0.01 mF, and
C
OUT
= 10 mF, unless otherwise noted.
NOISE SPECTRAL DENSITY NOISE SPECTRAL DENSITY
Figure 15. Figure 16.
I
BIAS
vs I
OUT
AND TEMPERATURE I
BIAS
vs V
BIAS
AND V
OUT
Figure 17. Figure 18.
I
BIAS
SHUTDOWN vs TEMPERATURE
Figure 19.
Copyright © 2010, Texas Instruments Incorporated Submit Documentation Feedback 9
Product Folder Link(s): TPS74401-EP