Datasheet

ELECTRICAL CHARACTERISTICS
TPS720xx
www.ti.com ........................................................................................................................................................ SBVS100D – JUNE 2008 – REVISED AUGUST 2009
Over operating temperature range (T
J
= – 40 ° C to +125 ° C), V
BIAS
= (V
OUT
+ 1.4V) or 2.5V (whichever is greater); V
IN
≥ V
OUT
+
0.5V, I
OUT
= 1mA, V
EN
= 1.1V, C
OUT
= 2.2 µ F, unless otherwise noted. Typical values are at T
J
= +25 ° C.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
BIAS
or
V
IN
Input voltage range 1.1
(1)
V
4.5
(2)
V
BIAS
Bias voltage range 2.5 5.5 V
Output voltage range
(4)
0.9 3.6 V
Nominal T
J
= +25 ° C – 3.0 +3.0 mV
V
OUT
+ 1.4V ≤ V
BIAS
≤ 5.5V,
Over V
BIAS
, V
IN
, I
OUT
,
V
OUT
+ 0.5V ≤ V
IN
≤ 4.5V, – 2.0 +2.0 %
T
J
= – 40 ° C to +125 ° C
0mA ≤ I
OUT
≤ 350mA
DRV package only:
V
OUT
+ 1.4V ≤ V
BIAS
≤ 5.5V,
Over V
BIAS
, V
IN
, I
OUT
,
V
OUT
+ 0.5V ≤ V
IN
≤ 4.5V, – 25 +25 mV
T
J
= – 40 ° C to +125 ° C
V
OUT
(3)
Output 0mA ≤ I
OUT
≤ 350mA,
accuracy V
OUT
< 1.2V
YZU package only:
V
OUT
+ 1.4V ≤ V
BIAS
≤ 5.5V,
Over V
BIAS
, V
IN
, I
OUT
,
V
OUT
+ 0.5V ≤ V
IN
≤ 4.5V, – 1.0 +1.0 %
T
J
= – 10 ° C to +85 ° C
0mA ≤ I
OUT
≤ 350mA
1.6V ≤ V
OUT
≤ 3.3V
V
OUT
+ 1.4V ≤ V
BIAS
≤ 5.5V,
V
IN
floating ± 1.0 %
0 µ A ≤ I
OUT
≤ 500 µ A
Δ V
OUT
/ Δ V
IN
V
IN
line regulation V
IN
= (V
OUT
+ 0.5V) to 4.5V, I
OUT
= 1mA 16 µ V/V
V
BIAS
= (V
OUT
+ 1.4V) or 2.5V (whichever is
Δ V
OUT
/ Δ V
BIAS
V
BIAS
line regulation 16 µ V/V
greater) to 5.5V, I
OUT
= 1mA
V
IN
line transient Δ V
IN
= 400mV, t
RISE
= t
FALL
= 1 µ s ± 200 µ V
V
BIAS
line transient Δ V
BIAS
= 600mV, t
RISE
= t
FALL
= 1 µ s ± 0.8 mV
Δ V
OUT
/ Δ I
OUT
Load regulation 0mA ≤ I
OUT
≤ 350mA (no load to full load) – 15 µ V/mA
Load transient 0mA ≤ I
OUT
≤ 350mA, t
RISE
= t
FALL
= 1 µ s ± 15 mV
V
IN
= V
OUT(NOM)
– 0.1V,
V
DO_IN
V
IN
dropout voltage
(5)
(V
BIAS
– V
OUT(NOM)
) = 1.4V, 110 200 mV
I
OUT
= 350mA
V
DO_BIAS
V
BIAS
dropout voltage
(6)
V
IN
= V
OUT(NOM)
+ 0.3V, I
OUT
= 350mA 1.09 1.4 V
I
CL
Output current limit V
OUT
= 0.9 × V
OUT(NOM)
420 525 800 mA
I
OUT
= 100 µ A 38 µ A
I
GND
Ground pin current
I
OUT
= 0mA to 350mA 54 80 µ A
I
SHDN
Shutdown current (I
GND
) V
EN
≤ 0.4V, T
J
= -40 ° C to +85 ° C 0.5 2 µ A
f = 10Hz 85 dB
f = 100Hz 85 dB
V
IN
– V
OUT
≥ 0.5V,
f = 1kHz 85 dB
PSRR V
IN
power-supply rejection ratio V
BIAS
= V
OUT
+ 1.4V,
f = 10kHz 80 dB
I
OUT
= 350mA
f = 100kHz 70 dB
f = 1MHz 50 dB
(1) Performance specifications are ensured up to a minimum V
IN
= V
OUT
+ 0.5V.
(2) Whichever is less.
(3) Minimum V
BIAS
= (V
OUT
+ 1.4V) or 2.5V (whichever is greater) and V
IN
= V
OUT
+ 0.5V.
(4) V
O
nominal value is factory programmable through the onchip EEPROM.
(5) Measured for devices with V
OUT(NOM)
≥ 1.2V.
(6) V
BIAS
– V
OUT
with V
OUT
= V
OUT(NOM)
– 0.1V. Measured for devices with V
OUT(NOM)
≥ 1.8V.
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