Datasheet

ABSOLUTE MAXIMUM RATINGS
(1)
DISSIPATION RATINGS
TPS718xx
TPS719xx
SBVS088C FEBRUARY 2007 REVISED MAY 2008 .....................................................................................................................................................
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This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ORDERING INFORMATION
(1)
PRODUCT V
OUT
(2) (3)
TPS718 xx-yywwwz A denotes device with rotated pin 1 orientation of wafer-chipscale package.
TPS718A xx-yywwwz XX is nominal output voltage for LDO1 (for example, 28 = 2.8V).
TPS719 xx-yywwwz YY is nominal output voltage for LDO2.
TPS719A xx-yywwwz WWW is package designator.
Z is tape and reel quantity (R = 3000, T = 250).
Examples: TPS71918 285DRVR XX = 18 = 1.8V, YYY = 285 = 2.85V
TPS719185-33DRVR XXX = 185 = 1.85V, YY = 33 = 3.3V
DRV = 2mm x 2mm SON package
Z = R = 3000 piece reel
(1) For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com .
(2) Both outputs are programmable from 0.9V to 3.6V in 50mV increments.
(3) Output voltages from 0.9V to 3.6V in 50mV increments are available through the use of innovative factory EEPROM programming;
minimum order quantities may apply. Contact factory for details and availability.
Over operating temperature range (unless otherwise noted). All voltages are with respect to GND.
PARAMETER TPS718xx, TPS719xx UNIT
Input voltage range, V
IN
0.3 to +7.0 V
Enable voltage range, V
EN1
and V
EN2
0.3 to V
IN
+ 0.3V V
Output voltage range, V
OUT
0.3 to +7.0 V
Peak output current Internally limited
Output short-circuit duration Indefinite
Junction temperature range, T
J
55 to +150 ° C
Storage temperature range , T
STG
55 to +150 ° C
Total continuous power dissipation, P
DISS
See Dissipation Ratings Table
ESD rating, HBM 2 kV
ESD rating, CDM 500 V
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
DERATING FACTOR
BOARD PACKAGE R
θ JC
R
θ JA
ABOVE T
A
= +25 ° C T
A
< +25 ° C T
A
= +70 ° C T
A
= +85 ° C
High-K
(1)
DRV 20 ° C/W 95 ° C/W 10.53mW/ ° C 1053mW 579mW 421mW
High-K
(1)
YZC 27 ° C/W 190 ° C/W 5.3mW/ ° C 530mW 295mW 215mW
(1) The JEDEC high-K (2s2p) board used to derive this data was a 3in × 3in, multilayer board with 1-ounce internal power and ground
planes and 2-ounce copper traces on top and bottom of the board.
2 Submit Documentation Feedback Copyright © 2007 2008, Texas Instruments Incorporated
Product Folder Link(s): TPS718xx TPS719xx