Datasheet

TPS70345, TPS70348
TPS70351, TPS70358
TPS70302
SLVS285H AUGUST 2000REVISED APRIL 2010
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ELECTRICAL CHARACTERISTICS (continued)
Over recommended operating junction temperature range (T
J
= –40°C to +125°C), V
IN1
or V
IN2
= V
OUTX(nom)
+ 1V, I
OUTX
= 1mA,
EN = 0V, C
OUT1
= 22mF, and C
OUT2
= 47mF (unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
PG Terminal
Minimum input voltage for valid PG I
(PG)
= 300 mA, V
(PG1)
0.8 V 1.0 1.3 V
Trip threshold voltage V
O
decreasing 92 95 98 %V
OUT
Hysteresis voltage Measured at V
O
0.5 %V
OUT
t
r(PG1)
Rising edge deglitch 30 ms
Output low voltage V
IN
= 2.7 V, I
(PG)
= 1 mA 0.15 0.4 V
Leakage current V
(PG1)
= 6 V 1 mA
EN Terminal
High-level EN input voltage 2 V
Low-level EN input voltage 0.7 V
Input current (EN) –1 1 mA
SEQ Terminal
High-level SEQ input voltage 2 V
Low-level SEQ input voltage 0.7 V
SEQ pull-up current source 6 mA
MR1/MR2 Terminal
High-level input voltage 2 V
Low-level input voltage 0.7 V
Pull-up current source 6 mA
V
OUT2
Terminal
V
OUT2
UV comparator: positive-going
input threshold voltage at V
OUT1
UV 80 83 86 %V
OUT
comparator
%V
OUT
,
V
OUT2
UV comparator: hysteresis 3
mV
V
OUT2
UV comparator: falling edge
V
SENSE2
decreasing below threshold 140 ms
deglitch
Peak output current 2 ms pulse width 3 A
Discharge transistor current V
OUT2
= 1.5 V 7.5 mA
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