Datasheet

Device
Onboard
MICBIAS.GND
MIC.MAIN.P
MICBIAS1.OUT
R
SM
MIC.MAIN.M
4 1
3 2
Power Output
GND GND
1 kW
Optional
dependingon
dynamicofMIC
SiliconMIC
SPM0204HE5-PB
(SPM0102ND3-C)
037-007
C
SM
C
SM.P
C
SM.PG
C
SM.M
TPS65930/TPS65920
SWCS037G–MAY 2008– REVISED APRIL 2011 www.ti.com
The silicon microphone is the integration of mechanical elements and electronics on a common silicon
substrate through microfabrication technology.
The complementary metal oxide semiconductor (CMOS) MEMS microphone is more like an analog IC
than a classical microphone, or electric condenser microphone (ECM). It is powered as an IC with a direct
connection to the power supply. The on-chip isolation between the power input and the rest of the system
adds power supply rejection (PSR) to the component. This makes the CMOS MEMS microphone
inherently more immune to power supply noise than an ECM and eliminates the need for additional
filtering circuitry to keep the power supply line clean.
Table 6-9 lists the characteristics of the silicon microphone module.
Table 6-9. Silicon Microphone Module Characteristics
Parameter Test Conditions Min Typ Max Unit
Bias voltage 2.2 V
Load current 1 mA
Output noise P-weighted 20 Hz to 6.6 kHz 1.8 μV
RMS
Figure 6-8 is a schematic for the silicon microphone.
Figure 6-8. Silicon Microphone
NOTE
For other component values, see Table 14-1.
64 Audio/Voice Module (TPS65930 Device Only) Copyright © 2008–2011, Texas Instruments Incorporated
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