Datasheet

TPS65930/TPS65920
www.ti.com
SWCS037GMAY 2008REVISED APRIL 2011
4.1.3 VIO dc-dc Regulator
4.1.3.1 VIO dc-dc Regulator Characteristics
The I/O and memory dc-dc regulator is a 600-mA stepdown dc-dc converter (internal FET) with two output
voltage settings. It supplies the memories and all I/O ports in the application and is one of the first power
providers to switch on in the power-up sequence. This dc-dc regulator can be placed in sleep or
power-down mode; however, care must be taken in the sequencing of this power provider, because
numerous ESD blocks are connected to this supply. Table 4-5 describes the regulator characteristics.
Table 4-5. VIO dc-dc Regulator Characteristics
Parameter Comments Min Typ Max Unit
Input voltage range 2.7 3.6 4.5 V
1.8
Output voltage
(1)
V
1.85
4% 4%
Output accuracy
(2)
3% 3%
Switching frequency 3.2 MHz
I
O
= 10 mA, sleep 85%
Conversion efficiency
(3)
Figure 4-6 in active mode
100 mA < I
O
< 400 mA 85%
400 mA < I
O
< 600 mA 80%
On mode 700 mA
Output current
Sleep mode 10
Ground current (I
Q
) Off at 30°C 1 μA
Sleep, unloaded 50
Active, unloaded, not switching 300
Load transient
(4)
50 mV
Line transient 300 mV
PP
ac, input rise and fall time 10 μs 10 mV
Start-up time 0.25 1 ms
Recovery time From sleep mode to on mode with constant <10 100 μs
load
Output shunt resistor (internal pulldown) 500 700
Value 0.7 1 1.3 μH
External coil DCR 0.1
Saturation current 900 mA
Value 8 10 12 μF
External capacitor
ESR at switching frequency 1 20 m
(1) This voltage is tuned according to the platform and transient requirements.
(2) ±4% accuracy includes all the variation (line and load regulation, line and load transient, temperature, process)
±3% accuracy is dc accuracy only.
(3) VBAT = 3.8 V, VIO = 1.8 V, Fs = 3.2 MHz, L = 1 μH, L
DCR
= 100 m, C = 10 μF, ESR = 10 m
(4) Load transient can also be specified as 0 < I
O
< I
OUTmax
/2, Δt = 1 μs, 100 mV but this is not included in ±4% accuracy.
Copyright © 20082011, Texas Instruments Incorporated Power Module 35
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