Datasheet

TPS65910 , TPS65910A , TPS65910A3 , TPS659101
TPS659102 , TPS659103 , TPS659104 , TPS659105
TPS659106, TPS659107, TPS659108, TPS659109
SWCS046U –MARCH 2010–REVISED JUNE 2014 www.ti.com
5.14 VIO SMPS
over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Input voltage (VCCIO and VCC7) V
IN
I
OUT
≤ 800 mA 2.7 5.5
V
OUT
= 1.5 V or 1.8 V, I
OUT
> 800 mA 3.2 5.5
V
V
OUT
= 2.5 V, I
OUT
> 800 mA 4.0 5.5
V
OUT
= 3.3 V, I
OUT
> 800 mA 4.4 5.5
PWM mode (VIO_PSKIP = 0) or pulse skip
DC output voltage (V
OUT
)
mode I
OUT
to I
MAX
VSEL=00 –3% 1.5 +3%
VSEL = 01, default BOOT[1:0] = 00 and 01 –3% 1.8 +3%
VSEL = 10 –3% 2.5 +3% V
VSEL = 11 –3% 3.3 +3%
Power down 0
Rated output current I
OUTmax
ILMAX[1:0] = 00, default 500
mA
ILMAX[1:0] = 01 1000
P-channel MOSFET V
IN
= V
INmin
300
mΩ
On-resistance R
DS(ON)_PMOS
V
IN
= 3.8 V 250 400
P-channel leakage current I
LK_PMOS
V
IN
= V
INMAX
, SWIO = 0 V 2 µA
N-channel MOSFET V
IN
= V
MIN
300
mΩ
On-resistance R
DS(ON)_NMOS
V
IN
= 3.8 V 250 400
N-channel leakage current I
LK_NMOS
V
IN
= V
INmax
, SWIO = V
INmax
2 µA
PMOS current limit (high-side) V
IN
= V
INmin
to V
INmax
, ILMAX[1:0] = 00 650
V
IN
= V
INmin
to V
INmax
, ILMAX[1:0] = 01 1200 mA
V
IN
= V
INmin
to V
INmax
, ILMAX[1:0] = 10 1700
NMOS current limit (low-side) Source current load:
V
IN
= V
INmin
to V
INmax
, ILMAX[1:0] = 00 650
V
IN
= V
INmin
to V
INmax
, ILMAX[1:0] = 01 1200
V
IN
= V
INmin
to V
INmax
, ILMAX[1:0] = 10 1700
mA
Sink current load:
V
IN
= V
INmin
to V
INmax
, ILMAX[1:0] = 00 800
V
IN
= V
INmin
to V
INmax
, ILMAX[1:0] = 01 1200
V
IN
= V
INmin
to V
INmax
, ILMAX[1:0] = 10 1700
DC load regulation On mode, I
OUT
= 0 to I
OUTmax
20 mV
DC line regulation On mode, V
IN
= V
INmin
to V
INmax
20 mV
V
IN
= 3.8 V, V
OUT
= 1.8 V
50 mV
Transient load regulation I
OUT
= 0 to 500 mA , Max slew = 100 mA/µs
I
OUT
= 700 to 1200 mA , Max slew = 100 mA/µs
t on, off to on I
OUT
= 200 mA 350 µs
Overshoot SMPS turned on 3%
0.025 ×
Power-save mode Ripple voltage Pulse skipping mode, I
OUT
= 1 mA V
PP
V
OUT
Switching frequency 3 MHz
Duty cycle 100 %
Minimum On Time T
ON(MIN)
35 ns
P-channel MOSFET
VFBIO internal resistance 0.5 1 MΩ
Discharge resistor for power-down
During device switch-off sequence 30 50 Ω
sequence R
DIS
Note: No discharge resistor is applied if VIO is
turned off while the device is on.
20 Specifications Copyright © 2010–2014, Texas Instruments Incorporated
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