Datasheet

TPS65910, TPS65910A, TPS65910A3, TPS659101, TPS659102, TPS659103
TPS659104, TPS659105, TPS659106, TPS659107, TPS659108, TPS659109
www.ti.com SWCS046T –MARCH 2010–REVISED SEPTEMBER 2013
VDD3 SMPS
over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Input voltage V
IN
3 5.5 V
DC output voltage (V
OUT
) 4.65 5 5.25 V
Rated output current I
OUTmax
100 mA
N-channel MOSFET V
IN
= 3.6 V 500 mΩ
On-resistance R
DS(ON)_NMOS
N-channel MOSFET leakage
V
IN
= V
INmax
, SW3 = V
INmax
2 µA
current I
LK_NMOS
N-channel MOSFET DC current
V
IN
= V
INmin
to V
INmax
, sink current load 430 550 mA
limit
Turn-on inrush current V
IN
= V
INmin
to V
INmax
850 mA
Ripple voltage 20 mV
DC load regulation On mode, I
OUT
= 0 to I
OUTmax
100 mV
DC line regulation On mode, V
IN
= V
INmin
to 5 V @ I
OUT
= I
OUTmax
100 mV
Turn-on time I
OUT
= 8 mA, V
OUT
= 0 to 4.4 V 200 µs
Overshoot 3%
Switching frequency 1 MHz
VFB3 internal resistance 088 MΩ
Ground current (I
Q
) Off 1
µA
I
OUT
= 0 mA to I
OUTmax
, V
IN
= 3.6 V 360
Conversion efficiency V
IN
= 3.6 V:
I
OUT
= 10 mA 81%
I
OUT
= 50 mA 85%
I
OUT
= 100 mA 85%
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TPS659105 TPS659106 TPS659107 TPS659108 TPS659109