Datasheet

ELECTRICAL CHARACTERISTICS SWITCHED MODE SM2 STEP-DOWN CONVERTER
ELECTRICAL CHARACTERISTICS GPIOs
TPS65820
SLVS663B MAY 2006 REVISED APRIL 2008 ..............................................................................................................................................................
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Over recommended operating conditions (typical values at T
J
= 25 ° C), V
O(SM1)
= 1.24 V, application circuit as in Figure 3
(unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Not 10
I
Q(SM2)
= I(VIN_ SM2), no output load
switching
I
Q(SM2)
Quiescent current for SM2 µ A
SM2 OFF, set via I
2
C 0.1
I
O(SM2)
Output current range 600 mA
Available output
voltages: V
O(SM2)TYP
=
Output voltage, selectable via I
2
C, standby OFF
1 V to 3.4 V, adjustable
in 80 mV steps
V
Available output
V
O(SM2)
= V
SBY(SM2)
, output voltage range, standby voltages: V
SBY(SM2)
= 1
ON V to 3.4 V, adjustable in
80 mV steps
V
O(SM2)
Output voltage
Total accuracy, V
O(SM2)TYP
= V
SM2(SBY)
= 1.8 V,
V(VIN_SM2) = greater of [3 V or (V
O(SM2)
+ 0.3 V)] 3% 3%
to 4.7 V; 0 mA I
O(SM2)
600 mA
Line regulation, V(VIN_SM2) = greater of %/V
[3 V or (V
O(SM2)
+ 0.3 V)] 0.027
to 4.7 V; 0 mA I
O(SM2)
600 mA
Load regulation, V(VIN_SM2) = 4.7 V,
0.139 %/A
I
O(SM2)
: 60 mA 540 mA
P-channel MOSFET
R
DSON(PSM2)
V(VIN_SM2) = 3.6 V, 100% duty cycle set 310 500 m
on-resistance
I
LKG(PSM2)
P-channel leakage current 0.1 µ A
N-channel MOSFET
R
DSON(NSM2)
V(VIN_SM2) = 3.6 V, 0% duty cycle set 220 330 m
on-resistance
I
LKG(PSM2)
N-channel leakage current 5 µ A
I
LIM(SM2)
P- and N-channel current limit 3 V < V(VIN_SM2) < 4.7 V, TPS65820 900 1050 1200 mA
f
S(SM2)
Oscillator frequency PWM mode set 1.3 1.5 1.7 MHz
V(VIN_SM2) = 4.2 V, I
O(SM2)
= 300 mA,
EFF
(SM2)
Efficiency 90%
V
O(SM2)
= 3 V
Converter OFF ON, V
O(SM2)
: 5% 95% of target
t
SS(SM2)
Soft start ramp time 750 µ s
value
t
DLY(SM2)
Converter turn-on delay GPIO2 pin programmed as SM2 converter enable 170 µ s
control. Measured from V(GPIO2): LO HI
Over recommended operating conditions (typical values at T
J
= 25 ° C), application circuit as in Figure 3 (unless otherwise
noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
GPIO1 3
V
OL
Low level output voltage GPIO0 I
OL
= 20 mA 0.5 V
I
OGPIO
Low level sink current into GPIO1, 2, 3 V(GPIOn) = V(OUT) 20 mA
V
IL
Low level input voltage 0.4 V
I
LKG(GPIO)
Input leakage current V(GPIOn) = V(OUT) 1 µ A
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