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ELECTRICAL CHARACTERISTICS – SWITCHED MODE SM2 STEP DOWN CONVERTER
ELECTRICAL CHARACTERISTICS – GPIOs
TPS65810
TPS65811
SLVS658B – MARCH 2006 – REVISED FEBRUARY 2007
Over recommended operating conditions (typical values at T
J
= 25 ° C), V
O(SM1)
= 1.24 V, application circuit Figure 3 (unless
otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
I
Q(SM2)
= I(VIN_ SM2), no output load, not 10
switching
I
Q(SM2)
Quiescent current for SM2 µ A
SM2 OFF, set via I
2
C 0.1
Vin = 4.2 v, Vout = 1.24 V (TPS65810) 600
I
O(SM2)
Output current range mA
Vin = 4.2 v, Vout = 1.24 V (TPS65811) 750
Available output voltages:
Output voltage, selectable via I
2
C, standby OFF V
O(SM2)TYP
= 1 V to 3.4 V,
adjustable in 80-mV steps
V
Available output voltages:
V
O(SM2)
= V
SBY(SM2)
, Output voltage range,
V
SBY(SM2)
= 1 V to 3.4 V,
Standby ON
adjustable in 80-mV steps
Total accuracy, V
O(SM2)TYP
= V
SM2(SBY)
= 1.8 V,
V
O(SM2)
Output voltage V(VIN_SM2) = greater of [3.0 V or (V
O(SM2)
+ 0.3
– 3% 3%
V)]
to 4.7 V; 0 mA ≤ I
O(SM2)
≤ 600 mA
Line regulation, V(VIN_SM2) = greater of %/V
[3 V or (V
O(SM2)
+ 0.3 V)] 0.027
to 4.7 V; 0 mA ≤ I
O(SM2)
≤ 600 mA
Load regulation, V(VIN_SM2) = 4.7 V,
0.139 %/A
I
O(SM2)
: 60 mA → 540 mA
P-channel MOSFET
R
DSON(PSM2)
V(VIN_SM2) = 3.6 V, 100% duty cycle set 310 500 m Ω
on-resistance
I
LKG(PSM2)
P-channel leakage current 0.1 µ A
N-channel MOSFET
R
DSON(NSM2)
V(VIN_SM2) = 3.6 V, 0% duty cycle set 220 330 m Ω
on-resistance
I
LKG(PSM2)
N-channel leakage current 5 µ A
3 V < V(VIN_SM2) < 4.7 V (TPS65810) 900 1050 1200
I
LIM(SM2)
P- and N-channel current limit mA
3 V < V(VIN_SM2) < 4.7 V (TPS65811) 1000 1200 1400
f
S(SM2)
Oscillator frequency PWM mode set 1.3 1.5 1.7 MHz
V(VIN_SM2) = 4.2 V, I
O(SM2)
= 300 mA,
EFF
(SM2)
Efficiency 90%
V
O(SM2)
= 3 V
Converter OFF → ON, V
O(SM2)
: 5% → 95% of
t
SS(SM2)
Soft start ramp time 750 µ s
target value
t
DLY(SM2)
Converter turn-on delay GPIO2 pin programmed as SM2 converter 170 µ s
enable control. Measured from V(GPIO2): LO →
HI
Over recommended operating conditions (typical values at T
J
= 25 ° C), application circuit as in Figure 3 (unless otherwise
noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
GPIO1 – 3
V
OL
Low level output voltage GPIO0 I
OL
= 20 mA 0.5 V
I
OGPIO
Low level sink current into GPIO1,2,3 V(GPIOn) = V(OUT) 20 mA
V
IL
Low level input voltage 0.4 V
I
LKG(GPIO)
Input leakage current V(GPIOn) = V(OUT) 1 µ A
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