Datasheet

TPS65563A
www.ti.com ......................................................................................................................................................... SLVS858A – JULY 2008 – REVISED AUGUST 2008
TERMINAL FUNCTIONS
TERMINAL
I/O DESCRIPTION
NO. NAME
1, 2 SW O Primary-side power MOSFET switch. Connect SW to the switched side of the transformer.
Battery voltage monitor input for detecting OFF timing of power MOSFET. Connect VBAT to an
3 VBAT I input voltage from battery. The arrowable range is from 1.4 V to 12 V. Bypass VBAT to GND with
a 10- µ F ceramic capacitor as close to the IC as possible.
Primary-side peak current control input. The voltage at I_PEAK sets the peak current into SW. See
4 I_PEAK I
the Programming Peak Current section for details on selecting V
I_PEAK
.
Charge enable/disable input. Drive CHG high to start charging the output capacitor. Drive CHG
6 CHG I
low to terminate charging.
Flash enable/disable. High level is xenon flash on with F_EN being high. Low level is xenon flash
7 F_ON I
off even if F_EN is high.
Flash acceptable. High level is acceptable to xenon flash on with F_ON pin. Low level forces
8 F_EN I
disable of xenon flash on even if F_ON is high.
Charge completion indicator. XFULL is an open-drain output that pulls low once the output is fully
9 XFULL O charged. XFULL is high impedance during charging and all fault conditions. The recovery condition
from low to high is to turn low at the CHG pin only.
Power supply. VCC is the gate drive supply and IC supply. The allowable range is from 2.7 V to
10 VCC I
5.5 V. Bypass VCC to GND with a 1- µ F ceramic capacitor as close to the IC as possible.
11 IGBT_VCC O Power supply for IGBT driver block
IGBT gate driver output for turning on G_IGBT swings from GND to IGBT_VCC to drive external
12 G_IGBT_P O
IGBT devices. The external resistor is needed. The value depends on the characteristics of IGBT.
IGBT gate driver output for turning off G_IGBT swings from IGBT_VCC to GND to drive external
13 G_IGBT_N O
IGBT devices. The external resistor is needed. The value depends on the characteristics of IGBT.
5, 14, 15 GND – Ground for power and IC internal circuits. Connect to the ground plane.
16 TEST_GND – Used by TI, should be connected to GND and ground plane
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