Datasheet
ELECTRICAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
TPS65563A
SLVS858A – JULY 2008 – REVISED AUGUST 2008 .........................................................................................................................................................
www.ti.com
T
A
= 25 ° C, VBAT = 4.2 V, VCC = 3 V, IGBT_VCC = 3 V, V
SW
= 4.2 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
CHG = VCC, F_ON = GND,
I
CC1
Supply current from VBAT 140 200 µ A
F_EN = GND, XFULL = Hi-Z
CHG = VCC, F_ON = GND,
I
CC2
Supply current from VCC 2 3 mA
F_EN = GND, XFULL = Hi-Z
CHG = GND, F_ON = VCC,
I
CC3
Supply current from IGBT_VCC 14 20 µ A
F_EN = VCC
Supply current from VCC, IGBT_VCC, CHG = GND, F_ON = GND,
I
CC4
1 µ A
and VBAT F_EN = GND
I
LKG1_SW
Leakage current of SW V
SW
= 4.2 V 2 µ A
I
LKG2_SW
Leakage current of SW V
SW
= 45 V 500 µ A
I
sink
Sink current at I_PEAK VCC = V
I_PEAK
= 3 V 0.1 µ A
I
PEAK1
Lower point of I
SW
V
I_PEAK
= 0.1V 0.42 0.62 0.82 A
I
PEAK2
Middle point of I
SW
V
I_PEAK
= 0.65 V 1.1 1.3 1.5 A
I
PEAK3
Upper point of I
SW
V
I_PEAK
= 1.5 V 1.8 2 2.2 A
R
ON_XFULL
ON resistance between XFULL and GND I
X_FULL
= 1 mA 1.5 3 k Ω
R
ON_SW
ON resistance between SW and GND I
SW
= 1 A, VCC = 3 V 0.4 0.7 Ω
R
G_IGBT_N
G_IGBT_N ON resistance I
G_IGBT_N
= 100 mA 3 5 7.5 Ω
R
G_IGBT_P
G_IGBT_P ON resistance I
G_IGBT_P
= 100 mA 3 5 7.5 Ω
Pulldown resistance of CHG, F_ON,
R
INPD
V
CHG
, V
F_ON
, V
F_EN
= 3 V 100 k Ω
and F_EN
T
SD
(1)
Thermal shutdown detection temperature 140 150 160 ° C
VBAT+2 VBAT+ VBAT+2
V
FULL
Charge completion detection voltage at SW V
8.6 29 9.4
VBAT VBAT+ VBAT
V
ZERO
Zero current detection at SW V
+10m 25m +40m
Overcurrent protection trigger voltage VBAT VBAT VBAT
V
OCP
V
at SW – 150m – 100m – 50m
(1) Specified by design
T
A
= 25 ° C, VBAT = 4.2 V, VCC and IGBT_VCC = 3 V, V
SW
= 4.2 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
G_IGBT turns high/low after F_ON/F_EN turns high/low 25
SW OFF after I
SW
exceeds the threshold defined by I_PEAK 75 ns
t
PD
(1)
Propagation delay
XFULL turns low after V
SW
exceeds V
FULL
200
SW ON after CHG turns high 50 150 µ s
(1) Specified by design
4 Submit Documentation Feedback Copyright © 2008, Texas Instruments Incorporated
Product Folder Link(s): TPS65563A