Datasheet

ELECTRICAL CHARACTERISTICS
TPS65510
SLLS917 – SEPTEMBER 2008 .......................................................................................................................................................................................... www.ti.com
T
A
= 25 ° C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
(VO_BT)
: 3.6 V, VOUT: No load
I
CC1
Consumption current at VO_BT 60 100 µ A
V
(PWMON)
: AGND (PFM mode)
V
(VO_BT)
: 5 V, VOUT: No load
I
CC2
Consumption current at VO_BT 250 350 µ A
V
(PWMON)
: VOUT (PWM mode)
V
(VO_BT)
: 3.6 V, V
(VBK)
: 3 V
I
CC3
Consumption current at VBK 0.1 1 µ A
VOUT: No load
VO_BT: Open, V
(VBK)
: 3 V
I
CC4
Consumption current at VBK 2.5 5 µ A
VOUT: No load, V
(V_CTRL)
: VOUT
VO_BT: Open, V
(VBK)
: 3 V
I
CC5
Consumption current at VBK 1.2 3 µ A
VOUT: No load, V
(V_CTRL)
: AGND
I
CC6
Consumption current at VBAT V
(VBAT)
: 3.6 V, V
(VO_BT)
: 3.5 V 5 10 µ A
I
(SINK_CS)
Sink current at CS V
(CS)
: 0.5 V, CS pin: Low-Z 1 1.5 mA
I
(LEAK_CS)
Leakage current at CS V
(CS)
: 5.5 V, CS pin: Hi-Z 1 µ A
I
(SINK_XRESE
Sink current at XRESET V
(XRESET)
: 0.5 V, XRESET pin: Low-Z 1 1.5 mA
T)
I
(LEAK_XRESE
Leak current at XRESET V
(XRESET)
: 5.5 V, XRESET pin: Hi-Z 1 µ A
T)
I
(LEAK_VBK)
Leak current at VBK V
(VO_BT)
: 5.5 V, V
(VBK)
: 0 V 1 µ A
UVLO/CS detection level at
V
(UVLO_DET)
V
(VBAT)
: from 0 V to 5.5 V 2.50 2.70 2.90 V
VBAT
V
(UVLO_HYS)
UVLO/CS hysteresis at VBAT V
(VBAT)
: from 5.5 V to 0 V – 250 – 200 – 150 mV
V
(CS_DET)
CS detection level at VO_BT V
(VO_BT)
: from 5 V to 0 V 3.071 3.150 3.229 V
V
(CS_HYS)
CS hysteresis at VO_BT V
(VO_BT)
: from 0 V to 5 V 50 100 150 mV
V
(XRESET_DE
XRESET detection level V
(VOUT)
: from 3.3 V to 0 V 2.048 2.100 2.153 V
T)
V
(XRESET_HY
XRESET hysteresis V
(VOUT)
: from 0 V to 3.3 V 50 100 150 mV
S)
Change the power path for
V
(SW1)
Monitoring at VO_BT 2.94 3.00 3.06 V
VOUT
V
(SW2)
CS output disable level Monitoring at VOUT 3.072 3.135 3.198 V
V
(WAKE_DET)
Threshold of WAKE mode V
(VO_BT)
: from 0 V to 3.6 V 2.38 2.50 2.63 V
V
(WAKE_HYS)
WAKE mode hysteresis V
(VO_BT)
: from 3.6 V to 0 V – 150 – 100 – 50 mV
On resistance between VBK and VO_BT: Open, V
(VBK)
: 3 V,
R
(ON_VBK)
30 60 Ω
VOUT I
(VOUT)
: 2 mA
Thermal shutdown detection
TSD
(1)
150 ° C
temperature
(1) Specified by design. Not production tested.
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