Datasheet

APPLICATION CIRCUIT
TPS65510
SLLS917 – SEPTEMBER 2008 .......................................................................................................................................................................................... www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Figure 1. Typical Application Circuit (1.2-V/1.8-V Output)
Figure 2. Typical Application Circuit (3.3-V Output)
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Product Folder Link(s): TPS65510