Datasheet

TPS65217A, TPS65217B, TPS65217C, TPS65217D
www.ti.com SLVSB64F –NOVEMBER 2011–REVISED APRIL 2013
ELECTRICAL CHARACTERISTICS (continued)
V
BAT
= 3.6 V ±5%, T
J
= 27ºC (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
LS1/LDO3 & LS2/LDO4, CONFIGURED AS LOAD SWITCHES
V
IN
Input voltage range LS1_VIN, LS2_VIN pins 1.8 5.8 V
R
DS(ON)
P-channel MOSFET on-resistance V
IN
= 1.8 V, over full temperature range 300 650 mΩ
I
SC
Short circuit current limit Output shorted to GND 200 280 mA
R
DIS
Internal discharge resistor at output 375 Ω
Output capacitor Ceramic 1 10 12 µF
C
OUT
ESR of output capacitor 20 mΩ
WLED BOOST
V
IN
Input voltage range 2.7 5.8 V
V
OUT
Max output voltage I
SINK
= 20 mA 32 V
V
OVP
Output over-voltage protection 37 38 39 V
R
DS(ON)
N-channel MOSFET on-resistance V
IN
= 3.6 V 0.6 Ω
I
LEAK
N-channel leakage current V
DS
= 25 V, T
A
= 25°C 2 µA
I
LIMIT
N-channel MOSFET current limit 1.6 1.9 A
f
SW
Switching frequency 1.125 MHz
V
IN
= 3.6 V, 1% duty cycle setting 1.1
I
INRUSH
Inrush current on start-up A
V
IN
= 3.6 V, 100% duty cycle setting 2.1
L Inductor 18 µH
Output capacitor Ceramic 4.7 µF
C
OUT
ESR of output capacitor 20 mΩ
WLED CURRENT SINK1, SINK2
Over-voltage protection threshold at
V
SINK1,2
19 V
ISINK1, ISINK2 pins
V
DO, SINK1,2
Current sink drop-out voltage Measured from ISINK to GND 400 mV
V
ISET1,2
ISET1, ISET2 pin voltage 1.24 V
WLED current range (ISINK1, ISINK2) 1 25
R
ISET
= 130.0 kΩ 10
R
ISET
= 86.6 kΩ 15 mA
WLED sink current
R
ISET
= 64.9 kΩ 20
R
ISET
= 52.3 kΩ 25
I
SINK
= 5 mA to 25 mA,
I
SINK1,2
DC current set accuracy -5 5
100% duty cycle
R
SET1
= 52.3 kΩ, I
SINK
= 25 mA,
V
BAT
= 3.6 V, -5 5
%
100% duty cycle
DC current matching
R
SET1
= 130 kΩ, I
SINK
= 10 mA,
V
BAT
= 3.6 V, -5 5
100% duty cycle
FDIM[1:0] = 00 100
FDIM[1:0] = 01 200
f
PWM
PWM dimming frequency Hz
FDIM[1:0] = 10 500
FDIM[1:0] = 11 1000
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