Datasheet
TPS65200
www.ti.com
SLVSA48 –APRIL 2010
ELECTRICAL CHARACTERISTICS (continued)
VBAT = 3.6 V ±5%, T
J
= 27ºC (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
During boosting 2.5
Minimum battery voltage for boost
V
BATMIN
V
(VSYS pin)
Before boost starts 2.9 3.05
Boost output resistance at high
impedance mode (From VBUS to HZ_MODE = 1 500 kΩ
PGND)
CHARGER PROTECTION
Threshold over V
BUS
to turn off converter
Input V
BUSOVP
threshold voltage 6.3 6.5 6.7 V
during charge
V
OVP-IN_USB
V
OVP_IN_USB
hysteresis V
BUS
falling from above V
OVP_IN
140 mV
V
CSOUT
threshold over V
OREG
to turn off
Battery OVP threshold voltage 110 117 121 %
charger during charge (% V
OREG
)
V
OVP
Lower limit for V
CSOUT
falling from > V
OVP
V
OVP
hysteresis 11 %
(% V
OREG
)
Cycle-by-cycle current limit for
I
LIMIT
Charge mode operation 1.8 2.4 3 A
charge
V
CSOUT
rising, VSHRT connected to VDD 2 2.1 2.2 V
Trickle to fast charge threshold
V
BUS
–
Resistor connected from VSHRT to GND 1.8 V
0.7
Internal current source connected
V
SHORT
9.4 10 10.6 µA
to V
SHRT
pin
V
SHORT
hysteresis V
CSOUT
falling from above VSHORT 100 mV
Enable threshold for internal
percentage of VDD 90 %
V
SHORT
reference
I
SHORT
Trickle charge charging current V
CSOUT
≤ V
SHORT
20 30 40 mA
T
CF
Thermal regulation threshold Charge current begins to taper down 120 °C
Time constant for the 32-second
T
32S
32 second mode 32 s
timer
WLED VOLTAGE AND CURRENT CONTROL
V
REF
Voltage feedback regulation voltage 198 203 208 mV
V
FB
[4:0] = 01110 (V
FB
= 25%) 47 50 53
Voltage feedback regulation voltage
V
REF_PWM
mV
under brightness control
V
FB
[4:0] = 01110 (V
FB
= 10%) 17 20 23
f
CTRL
PWM dimming frequency 1 100 kHz
Minimum on-time for PWM dimming
t
CNTRL, MIN
2.2 µs
pulse
I
FB
Voltage feedback input bias current V
FB
= 200 mV 1 µA
f
PWM
PWM frequency, WLED boost 600 kHz
D
max
Maximum duty cycle V
FB
= 100 mV 90 93 %
t
min_on
Minimum 0N pulse width 40 ns
L Inductor 10 22 µH
C
OUT
Output capacitor 0.47 10 µF
WLED POWER SWIITCH
R
DS(on)
N-channel MOSFET on-resistance V
SYS
= 3.6 V 300 600 mΩ
I
LN_NFET
N-channel leakage current V
SWL
= 30 V, T
A
= 25°C 1 µA
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