Datasheet

TPS65200
SLVSA48 APRIL 2010
www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
VBAT = 3.6 V ±5%, T
J
= 27ºC (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT CURRENT LIMITING
I
IN_LIMIT
= 100 mA 88 93 98
I
IN_LIMIT
Input current limiting threshold I
IN_LIMIT
= 500 mA 450 475 500 mA
I
IN_LIMIT
= 975 mA 875 925 975
VDD REGULATOR
V
BUS
> V
IN(min)
or V
SYS
> V
BATMIN
,
Internal bias regulator voltage 2 6.5 V
I
VDD
= 1 mA, C
VDD
= 1 mF
V
DD
VDD output short current limit 30 mA
Voltage from BST pin to SWC pin During charge or boost operation 6.5 V
BATTERY RECHARGE THRESHOLD
Recharge threshold voltage Below V
OREG
100 130 160 mV
V
RCH
V
CSOUT
decreasing below threshold,
Deglitch time 130 ms
t
FALL
= 100 ns, 10-mV overdrive
STAT OUTPUT
Low-level output saturation voltage I
O
= 10 mA, sink current 0.4 V
V
OL(STAT)
High-level leakage current Voltage on STAT pin is 5 V 1 µA
REVERSE PROTECTION COMPARATOR
Reverse protection threshold,
V
REV
2.3 V V
CSOUT
V
OREG
, V
BUS
falling 0 40 100 mV
V
BUS-VCSOUT
Reverse protection exit hysteresis 2.3 V V
CSOUT
V
OREG
140 200 260 mV
V
REV-EXIT
Deglitch time for V
BUS
rising above
Rising voltage 30 ms
V
REV
+ V
REV_EXIT
VBUS UVLO
V
UVLO
IC active threshold voltage V
BUS
rising 3.05 3.3 3.55 V
V
UVLO_HYS
IC active hysteresis V
BUS
falling from above V
UVLO
120 150 mV
PWM
f
PWM
PWM frequency, charger 3 MHz
Internal top reverse blocking I
IN_LIMIT
= 500 mA,
180
MOSFET on-resistance Measured from VBUS to PMID
Internal top N-channel Switching
R
DSON
Measured from PMID to SWC 120 mΩ
MOSFET on-resistance
Internal bottom N-channel
Measured from SW to PGND 150
MOSFET on-resistance
D
MAX
Maximum duty cycle 99.5 %
D
MIN
Minimum duty cycle 0 %
Synchronous mode to
Low-side MOSFET
nonsynchronous mode transition 100 mA
cycle-by-cycle current sensing
current threshold
(1)
BOOST MODE OPERATION FOR VBUS (OPA_MODE=1, HZ_MODE=0)
2.5 V < V
BUS
< 4.5 V; Including line and
V
BUS_B
Boost output voltage (to pin VBUS) 4.75 5 5.25 V
load regulation over full temp range
I
BO
Maximum output current for boost V
BUS_B
= 5 V, 2.5 V < V
BUS
< 4.5 V 200 mA
Cycle by cycle current limit for
I
BLIMIT
V
BUS_B
= 5 V, 2.5 V < V
SYS
< 4.5 V 1 A
boost
Over voltage protection threshold Threshold over V
BUS
to turn off converter
5.8 6 6.2 V
for boost (VBUS pin) during boost
V
BUSOVP
VBUSOVP hysteresis V
BUS
falling from above V
BUSOVP
200 mV
Maximum battery voltage for boost V
SYS
rising edge during boost 4.75 4.9 5.05 V
V
BATMAX
VBATMAX hysteresis V
SYS
falling from above V
BATMAX
200 mV
(1) Bottom N-channel MOSFET always turns on for ~60 ns and then turns off if current is too low.
8 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated
Product Folder Link(s): TPS65200