Datasheet

TPS65200
SLVSA48 –APRIL 2010 www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
VBAT = 3.6 V ±5%, T
J
= 27ºC (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
WLED PROTECTION
Under Voltage Lock Out (VSYS pin) V
SYS
falling 2.2 2.5 V
V
UVLO
UVLO hysteresis 70 mV
V
OVP
Over Voltage Protection threshold 35 37 39 V
I
LIM
N-Channel MOSFET current limit D = D
max
560 700 840 mA
I
LIM_Start
Startup current limit D = D
max
400 mA
t
HALF_LIM
Time step for half current limit 5 ms
t
REF
V
REF
filter time constant 180 µs
t
step
V
REF
ramp up time 213 µs
CURRENT SHUNT MONITOR
V
CM
Common-mode input range V
CSIN
= V
CSOUT
-0.3 7 V
V
CSIN
= 2.7 V to 5 V, V
CSIN
– V
CSOUT
= 0
CMR Common-mode rejection 100 dB
mV
T
A
= 0°C to 60°C -75 75
V
OS, CSM
Offset-voltage, referred to input µV
T
A
= -20°C to 85°C -85 85
Gain 25 V/V
G
Gain error -1 1 %
Swing to positive power supply rail
V
SYS
- V
SHNT
100
(V
SYS
)
V
SHNT
mV
Swing to GND V
SHNT
- V
GND
100
GBW Bandwidth C
LOAD
= 10 pF 9 kHz
I
VZERO
VZERO bias current T
A
= -20°C to 85°C 10 nA
Swing to positive power supply rail
V
SYS
– V
ZERO
1.5
(V
SYS
)
V
ZERO
V
Swing to GND V
ZERO
- V
GND
0.7
Under voltage lock out (VSYS pin) V
SYS
falling 2.2 2.5 V
V
UVLO
UVLO hysteresis 70 mV
LDO
LDO Output Voltage VIN = 5.5V 4.8 4.9 5 V
V
LDO
PSRR f = 100 Hz, CLDO = 1.0 mF 60 dB
I
LDO
Maximum LDO Output Current 60 mA
V
DO
Dropout Voltage VIN = 4.5 V, ILDO = 50 mA 100 250 mV
D+/D- DETECTION
D+ voltage source 0.5 0.6 0.7 V
V
DP_SCR
D+ voltage source output current 250 µA
I
DM_SINK
D- current sink 50 100 150 µA
DM pin, switch open 4.5 5
C
I
Input capacitance pF
DP pin, switch open 4.5 5
DM pin, switch open -1 1
I
I
Input leakage µA
DP pin, switch open -1 1
V
DP_LOW
DP low comparator threshold 0.8 V
V
DM_HIGH
DM high comparator threshold 0.8 V
V
DM_LOW
DM low comparator threshold 475 mV
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