Datasheet

PRODUCTPREVIEW
DCDC2
VIN_P
10uF
4.7uF
VPOS
10nF 2.2uF
1M
52.3k
VEE_D
VEE_DRV
VEE_FB
4.7uH
VN_SW
From Battery
(3.0V-6.0V)
VEE (-20V)
VPOS (15V)
DCDC1
4.7uF
2.2uH
PGND1
VB_SW
10uF
10nF2.2uF
1M
47.5k
VDDH_D
VDDH_DRV
VDDH_FB
From Battery
(3.0V-6.0V)
VDDH (22V)
VDDH_EN VEE_EN
PGND2 PGND2
VPOS_EN
VB
LDO1
VEE
CHARGE
PUMP
VN
PBKG
PGND2
4.7uF
VNEG_IN
VDDH_IN
VNEG
VNEG (-15V)
VNEG_EN
LDO2
PowerPad®
TEMP
SENSOR
43k
10k NTC
TS
AGND2 ADC
TMST_VALUE[7:0]
4.7uF
4.7uF
VPOS_IN
VIN
10uF
VCOM_PWR
4.7uF
From Input Supply
(3.0V-6.0V)
4.7uF
VREF
AGND1
DAC
VCOM
VCOM[8:0]
VCOM_CTRL
4.7uF
From uC
VREF
4.7uF
INT_LDO
INT_LDO
VEE_IN
VDDH
CHARGE
PUMP
4.7uF
3.3V supply from system
To EPD panel
VIN3P3
V3P3
GATE DRIVER
V3P3_EN
1k
SCL
From uC
From/to uC or DSP
SDA
10k
VIO
PWR_GOOD
10k
VIO
DIGITAL
CORE
WAKEUP
INT
10k
VIO
10k
VIO
From uC
PWRUP
From uC
To uC
To uC
DGND
100n 100n
To panel back -plane
(0 to -5.11 V)
TPS65186
SLVSB04 –JULY 2011 www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
FUNCTIONAL BLOCK DIAGRAM
2 Copyright © 2011, Texas Instruments Incorporated