Datasheet

TPS65137
SLVS929A –MAY 2010–REVISED OCTOBER 2012 www.ti.com
ELECTRICAL CHARACTERISTICS
V
IN
= 3.5V, EN = VIN, OUTP = 4.63V, OUTN = –4.93V, T
A
= –40°C to 85°C, typical values are at T
A
= 25°C (unless otherwise
noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENT
V
IN
Input voltage range 2.3 5.5 V
I
Q
Operating quiescent current into Vin 400 μA
I
SD
Shutdown current into Vin 0.1 1.0 μA
V
IN
falling 2.0
UVLO Under-voltage lockout threshold V
V
IN
rising 2.3
f
s
Switching frequency Iout = 100 mA 1.6 MHz
Thermal shutdown 145 °C
Thermal shutdown hysteresis 10 °C
OUTPUT OUTP
V
POS
Positive output voltage regulation V
IN
= 2.3V to 5.5V, Iload=0mA to 150mA –1% 4.63 1% V
I
outP
Output current OUTP 200 mA
SWP MOSFET on-resistance V
IN
= 3.7 V, Isw = 200 mA 300
R
DS(ON)
mΩ
SWP MOSFET rectifier on-resistance V
IN
= 3.7 V, Isw = 200 mA 350
I
leak
Leakage current into OUTP CTRL = GND, V
OUTP
= 4.6V; TPS65137A 17 25 uA
I
SWP
SWP switch current limit V
IN
= 2.9 V 0.9 1.1 A
V
drop
LDO Dropout voltage Iout = 100 mA 300 mV
Line regulation 0 %/V
Load regulation 0.001 %/mA
OUTPUT OUTN
V
NEG
Negative output voltage range –2.2 –5.2 V
V
NEG
Negative output voltage regulation V
IN
= 2.3V to 5.5V, Iload = 0mA to 150mA; –100 +100 mV
Valid for all voltage steps
SWN MOSFET on-resistance V
IN
= 3.7 V, Isw = 200 mA 400
R
DS(ON)
mΩ
SWN MOSFET rectifier on-resistance V
IN
= 3.7 V, Isw = 200 mA 550
I
LKG
Leakage current out of OUTN CTRL = GND, V
OUTN
=-5.2V; TPS65137A 19 30 μA
I
SWN
SWN switch current limit V
IN
= 2.9 V 1.1 1.35 A
Line regulation 0 %/V
Load regulation 0.001 %/mA
CTRL INTERFACE
V
H
Logic high-level voltage 1.2 V
V
L
Logic low-level voltage 0.4 V
R Pull down resistor 150 200 860 kΩ
t
init
Initialization time 300 400 μs
t
ss
Softstart time 1 ms
t
off
Shutdown time period 30 80 μs
t
high
Pulse high level time period 2 10 25 μs
t
low
Pulse low level time period 2 10 25 μs
t
store
Data storage/accept time period 30 80 μs
t
set
OUTN transition time C
T
= 100 nF 20 ms
R
T
CT pin output impedance 150 250 500 kΩ
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