Datasheet

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TPS65050, TPS65051, TPS65052
TPS65054, TPS65056
SLVS710A – JANUARY 2007 – REVISED AUGUST 2007
ELECTRICAL CHARACTERISTICS (continued)
V
CC
= VINDCDC1/2 = 3.6 V, EN = V
CC
, MODE = GND, L = 2.2 μ H, C
O
= 10 μ F. T
A
= -40 ° C to 85 ° C, typical values are at
T
A
= 25 ° C (unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
MODE/DATA, EN_DCDC1, EN_DCDC2, DEFLDO1,
V
IL
Low-level input voltage DEFLDO2, DEFLDO3, DEFLDO4, EN_LDO1, 0 0.4 V
EN_LDO2, EN_LDO3, EN_LDO4, DEFDCDC2
MODE/DATA = GND or V
I
MODE/DATA, EN_DCDC1, EN_DCDC2,
DEFDCDC2, DEFLDO1, DEFLDO2, DEFLDO3, 0.01 1 μ A
DEFLDO4, EN_LDO1, EN_LDO2, EN_LDO3,
I
lB
Input bias current
EN_LDO4
TPS65051 and TPS65052 only
V_FB_LDOx = 1 V 100 nA
FB_LDO1, FB_LDO2, FB_LDO3, FB_LDO4
POWER SWITCH
VINDCDC1/2 = 3.6 V 280 630
DCDC1
VINDCDC1/2 = 2.5 V 400
r
DS(on)
P-channel MOSFET on resistance m Ω
VINDCDC1/2 = 3.6 V 280 630
DCDC2
VINDCDC1/2 = 2.5 V 400
I
lkg
P-channel leakage current VDCDCx = V
(DS)
= 6 V 1 μ A
VINDCDC1/2 = 3.6 V 220 450
DCDC1
VINDCDC1/2 = 2.5 V 320
r
DS(on)
N-channel MOSFET on resistance m Ω
VINDCDC1/2 = 3.6 V 220 450
DCDC2
VINDCDC1/2 = 2.5 V 320
I
lkg
N-channel leakage current VDCDCx = V
(DS)
= 6 V 7 10 μ A
TPS65050
0.85 1 1.15
TPS65054
2.5 V ≤ VINDCDC1/2 ≤ 6
DCDC1: A
Forward Current Limit
V
TPS65051, TPS65052,
I
(LIMF)
PMOS (High-Side) 1.19 1.4 1.65
TPS65056
and NMOS (Low side)
2.5 V ≤ VINDCDC1/2 ≤ 6
DCDC2: TPS65050 - TPS65056 0.85 1 1.15 A
V
Thermal shutdown Increasing junction temperature 150 ° C
Thermal shutdown hysteresis Decreasing junction temperature 20 ° C
OSCILLATOR
f
SW
Oscillator frequency 2.025 2.25 2.475 MHz
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