Datasheet

ELECTRICAL CHARACTERISTICS
TPS650240 , , TPS650241
TPS650242 , TPS650243
TPS650244 , TPS650245
www.ti.com .............................................................................................................................................................. SLVS774B – JUNE 2007 – REVISED JULY 2009
VINDCDC1 = VINDCDC2 = VINDCDC3 = VCC = VINLDO = 3.6V, T
A
= – 40 ° C to 85 ° C, typical values are at T
A
= 25 ° C
(unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VDCDC3 STEP-DOWN CONVERTER
V
VINDCDC3
Input voltage range 2.5 6.0 V
I
O
Maximum output current V
O
= 1.6V 800 mA
I
SD
Shutdown supply current in EN_DCDC3 = GND 0.1 1 µ A
VINDCDC3
R
DS(ON)
P-channel MOSFET on-resistance V
INDCDC3
= V
GS
= 3.6V 310 698 m Ω
I
LP
P-channel leakage current VINDCDC3 = 6.0V 0.1 2 µ A
R
DS(ON)
N-channel MOSFET on-resistance V
INDCDC3
= V
GS
= 3.6V 220 503 m Ω
I
LN
N-channel leakage current V
DS
= 6.0V 7 10 µ A
I
LIMF
Forward current limit (P- and 2.5V < V
INDCDC3
< 6.0V 1.00 1.20 1.40 A
N-channel)
f
S
Oscillator frequency 1.95 2.25 2.55 MHz
VDCDC3 Fixed output voltage V
O
= 0.9V to VINDCDC3 = 2.5V to 6.0V; – 2% 2%
MODE = 0 1.6V 0mA ≤ I
O
≤ 800mA
(PWM/PFM)
Fixed output voltage – 1% 1%
MODE = 1 (PWM)
Line regulation VINDCDC3 = VDCDC3 + 0.3V (min. 2.5 V) to 0.0 %/V
6.0V; I
O
= 10mA
Load regulation I
O
= 10mA to 600mA 0.25 %/A
T
SS
Soft start ramp time VDCDC3 ramping from 5% to 95% of target 750 µ s
value
R(L3) Internal resistance from L3 to GND 1 M Ω
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