Datasheet

RECOMMENDED OPERATING CONDITIONS
DISSIPATION RATINGS
(1)
ELECTRICAL CHARACTERISTICS
TPS62350, TPS62351
TPS62352, TPS62353
TPS62354, TPS62355, TPS62356
www.ti.com .............................................................................................................................................................. SLVS540E – MAY 2006 – REVISED APRIL 2008
over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
V
I
Input voltage range 2.7 5.5 V
T
A
Operating temperature range
(1)
-40 85 ° C
T
J
Operating virtual junction temperature range -40 125 ° C
(1) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may
have to be derated. Maximum ambient temperature (T
A(max)
) is dependent on the maximum operating junction temperature (T
J(max)
), the
maximum power dissipation of the device in the application (P
D(max)
), and the junction-to-ambient thermal resistance of the part/package
in the application ( θ
JA
), as given by the following equation: T
A(max)
= T
J(max)
– ( θ
JA
X P
D(max)
).
POWER RATING DERATING FACTOR
PACKAGE R
θ JA
(2)
FOR T
A
≤ 25 ° C ABOVE T
A
= 25 ° C
DRC 49 ° C/W 2050 mW 21 mW/ ° C
YZG 89 ° C/W 1100 mW 12 mW/ ° C
(1) Maximum power dissipation is a function of T
J
(max), θ
JA
and T
A
. The maximum allowable power dissipation at any allowable ambient
temperature is P
D
= [T
J
(max) – T
A
] / θ
JA
.
(2) This thermal data is measured with high-K board (4 layers board according to JESD51-7 JEDEC standard).
over operating free-air temperature range, typical values are at T
A
= 25 ° C. Unless otherwise noted, specifications apply with
V
I
= 3.6 V, EN = V
I
, VSEL = V
I
, SYNC = GND, VSEL0[6] bit = 1.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENT
TPS62350/1/2/3/4/5 110 150
I
O
= 0 mA, Fast PFM mode enabled
µ A
Device not switching
TPS62356 117 160
Operating quiescent
I
Q
TPS62350/1/2/3/4/5 28 45
I
O
= 0 mA, Light PFM mode enabled
current
µ A
Device not switching
TPS62356 35 52
TPS62350/1/2/3/4/5/6 I
O
= 0 mA, 3-MHz PWM mode operation 4.8 mA
EN = GND, EN_DCDC bit = X 0.1 2 µ A
I
(SD)
Shutdown current
EN = V
I
, EN_DCDC bit = 0 6.5 µ A
V
(UVLO)
Undervoltage lockout threshold 2.20 2.3 V
ENABLE, VSEL, SDA, SCL, SYNC
V
IH
High-level input voltage 1.2 V
V
IL
Low-level input voltage 0.4 V
I
lkg
Input leakage current Input tied to GND or V
I
0.01 1 µ A
POWER SWITCH
V
I
= V
(GS)
= 3.6 V, YZG package 250 500
TPS62350/1/2/3/4/5 V
I
= V
(GS)
= 3.6 V, DRC package 275 500
P-channel MOSFET on
r
DS(on)
m Ω
resistance
V
I
= V
(GS)
= 2.7 V, DRC package 350 750
TPS62356 V
I
= V
(GS)
= 3.2 V, YZG package 320 500
I
lkg
P-channel leakage current V
(DS)
= 6 V 1 µ A
V
I
= V
(GS)
= 3.6 V, YZG package 150 350
N-channel MOSFET on
r
DS(on)
TPS62350/1/2/3/4/5/6 V
I
= V
(GS)
= 3.6 V, DRC package 165 350 m Ω
resistance
V
I
= V
(GS)
= 2.7 V, YZG / DRC package 210 500
I
lkg
N-channel leakage current V
(DS)
= 6 V 1 µ A
R
(DIS)
Discharge resistor for power-down sequence 15 50 Ω
TPS62350/1/2/3/4/5 1150 1350 1600 mA
P-MOS current limit 2.7 V ≤ V
I
≤ 5.5 V
TPS62356 1300 1550 1800 mA
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Product Folder Link(s): TPS62350, TPS62351 TPS62352, TPS62353 TPS62354, TPS62355, TPS62356