Datasheet

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DISSIPATION RATINGS
(1)
ELECTRICAL CHARACTERISTICS
TPS62300, TPS62301, TPS62302
TPS62303, TPS62304, TPS62305,
TPS62311, TPS62313, TPS62315, TPS62320, TPS62321
SLVS528E – JULY 2004 – REVISED NOVEMBER 2007
POWER RATING DERATING FACTOR
PACKAGE R
θ JA
(2)
FOR T
A
≤ 25 ° C ABOVE T
A
= 25 ° C
DRC 49 ° C/W 2050 mW 21 mW/ ° C
YZD 250 ° C/W 400 mW 4 mW/ ° C
YED 250 ° C/W 400 mW 4 mW/ ° C
YZ 250 ° C/W 400 mW 4 mW/ ° C
(1) Maximum power dissipation is a function of T
J
(max), θ
JA
and T
A
. The maximum allowable power dissipation at any allowable ambient
temperature is P
D
= [T
J
(max)-T
A
] / θ
JA
(2) This thermal data is measured with low-K board (1 layer board according to JESD51-7 JEDEC standard).
V
I
= 3.6 V, V
O
= 1.6 V, EN = V
I
, MODE/SYNC = GND, L = 1 µ H, C
O
= 10 µ F, T
A
= -40 ° C to 85 ° C, typical values are at
T
A
= 25 ° C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENT
V
I
Input voltage range 2.7 6 V
TPS6230x
I
O
= 0 mA. PFM mode enabled, device not switching 86 105 µ A
TPS6232x
Operating
TPS6231x I
O
= 0 mA. PFM mode enabled, device not switching 86 120 µ A
I
Q
quiescent
current
TPS6230x
I
O
= 0 mA. Switching with no load
TPS6231x 3.6 mA
(MODE/SYNC = VIN)
TPS6232x
I
(SD)
Shutdown current EN = GND 0.1 1 µ A
TPS6230x
2.40 2.55 V
Undervoltage
TPS6232x
UVLO
lockout threshold
TPS6231x 2.00 2.20 V
ENABLE, MODE/SYNC
V
(EN)
EN high-level input voltage 1.2 V
V
(MODE/SYNC)
MODE/SYNC high-level input voltage 1.3 V
V
(EN)
, EN, MODE/SYNC low-level input
0.4 V
V
(MODE/SYNC)
voltage
I
(EN)
, EN, MODE/SYNC input leakage
EN, MODE/SYNC = GND or VIN 0.01 1 µ A
I
(MODE/SYNC)
current
POWER SWITCH
TPS6230x V
I
= V
(GS)
= 3.6 V 420 750 m Ω
P-channel MOSFET
r
DS(on)
TPS6231x
on resistance
V
I
= V
(GS)
= 2.8 V 520 1000 m Ω
TPS6232x
I
lkg
P-channel leakage current, PMOS V
(DS)
= 6 V 1 µ A
V
I
= V
(GS)
= 3.6 V 330 750 m Ω
r
DS(on)
N-channel MOSFET on resistance
V
I
= V
(GS)
= 2.8 V 400 1000 m Ω
Discharge resistor for power-down
R
(DIS)
30 50 Ω
sequence (TPS6232x only)
I
lkg
N-channel leakage current, NMOS V
(DS)
= 6 V 1 µ A
P-MOS current limit 2.7 V ≤ V
I
≤ 6 V 670 780 890 mA
N-MOS current limit - sourcing 2.7 V ≤ V
I
≤ 6 V 550 720 890 mA
N-MOS current limit - sinking 2.7 V ≤ V
I
≤ 6 V – 460 – 600 – 740 mA
Input current limit under short-circuit
V
O
= 0 V 390 mA
conditions
Thermal shutdown 150 ° C
Thermal shutdown hysteresis 20 ° C
4 Submit Documentation Feedback Copyright © 2004 – 2007, Texas Instruments Incorporated
Product Folder Link(s): TPS62300, TPS62301, TPS62302 TPS62303, TPS62304, TPS62305, TPS62311, TPS62313,
TPS62315, TPS62320, TPS62321