Datasheet

TPS62175, TPS62177
www.ti.com SLVSB35B –OCTOBER 2012–REVISED JANUARY 2014
ELECTRICAL CHARACTERISTICS
over free-air temperature range (T
A
=-40°C to +85°C) and V
IN
=4.75 to 28V. Typical values at V
IN
=12V and T
A
=25°C (unless
otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY
V
IN
Input Voltage Range 4.75 28 V
Operating Quiescent EN=High, SLEEP=High, I
OUT
=0mA, device not switching
I
Q
22 36 µA
Current
Sleep Mode Quiescent EN=High, SLEEP=Low, I
OUT
=0mA, device not switching
I
Q_SLEEP
4.8 10 µA
Current
I
SD
Shutdown Current EN=Low, current into VIN pin 1.5 5 µA
V
UVLO
Rising Input Voltage 4.5 4.6 4.7 V
Undervoltage Lockout
Threshold
Falling Input Voltage 2.9 V
T
SD
Thermal Shutdown Rising Junction Temperature
150
Temperature
°C
Thermal Shutdown
20
Hysteresis
CONTROL (EN, PG, SLEEP)
High Level Input
V
H
Threshold Voltage (EN, 0.9 V
SLEEP)
V
L
Low Level Input
Threshold Voltage (EN, 0.3 V
SLEEP)
Input Leakage Current
I
LKG_EN
EN=V
IN
5 300 nA
(EN)
Input Leakage Current
I
LKG_SLEEP
V
SLEEP
= 3.3V 1.4 µA
(SLEEP)
Rising (%V
OUT
) 93 96 99
Power Good Threshold
V
TH_PG
%
Voltage
Falling (%V
OUT
) 87 90 93
Power Good Output
V
OL_PG
I
PG
= -2mA 0.3 V
Low Voltage
Input Leakage Current
I
LKG_PG
V
PG
= 5V 5 300 nA
(PG)
POWER SWITCH
High-Side MOSFET
V
IN
≥ 6V 850 1430 mΩ
ON-Resistance
R
DS(ON)
Low-Side MOSFET
V
IN
≥ 6V 320 530 mΩ
ON-Resistance
Normal Operation 800 1000 1200
High-Side MOSFET
I
LIMF
mA
Current Limit
Startup Mode 450 525 600
OUTPUT
V
OUT
Output Voltage Range V
IN
≥ V
OUT
V
1 6
(TPS62175)
V
REF
Internal Reference
0.8 V
Voltage
I
OUT_SLEEP
Output Current in Sleep SLEEP= Low, V
OUT
=3.3V, L=10µH
15 mA
Mode
Input Leakage Current
I
LKG_FB
V
FB
= 0.8V 1 100 nA
(FB)
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