Datasheet

TPS62125
www.ti.com SLVSAQ5C –MARCH 2012–REVISED DECEMBER 2013
RECOMMENDED OPERATING CONDITIONS
MIN NOM MAX UNIT
Supply voltage V
IN
3 17 V
3V ≤ V
IN
< 6V 200
Output current capability mA
6V ≤ V
IN
≤ 17V 300
Operating ambient temperature T
A
(1)
, (Unless Otherwise Noted) –40 85 °C
Operating junction temperature range, T
J
–40 125 °C
(1) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may
have to be derated. Maximum ambient temperature (T
A(max)
) is dependent on the maximum operating junction temperature (T
J(max)
) and
the maximum power dissipation of the device in the application (P
D(max)
). see the IC Package Thermal Metrics application report,
SPRA953.
ELECTRICAL CHARACTERISTICS
T
A
= –40°C to 85°C, typical values are at T
A
= 25°C (unless otherwise noted), V
IN
= 12V
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY
V
IN
Input voltage range
(1)
3.0 17 V
V
OUT
Output voltage range 1.2 10 V
I
OUT
= 0mA, Device not switching, EN = V
IN
,
13 23 µA
regulator sleeps
I
OUT
= 0mA, Device switching, V
IN
= 7.2V,
I
Q
Quiescent current 14
V
OUT
= 1.2V, L = 22µH
µA
V
IN
= 5V, EN = 1.1V, enable comparator active,
6 11
device DC/DC converter off
V
IN
= 5 V = V
OUT
, T
A
= 25°C, high-side MOSFET
I
Active
Active mode current consumption 230 275 µA
switch fully turned on (100% Mode)
Enable comparator off, EN < 0.4V,
I
SD
Shutdown current
(2)
0.35 2.4 µA
V
OUT
= SW = 0 V, V
IN
= 5V
Falling V
IN
2.8 2.85 V
V
UVLO
Undervoltage lockout threshold
Rising V
IN
2.9 2.95 V
ENABLE COMPARATOR THRESHOLD AND HYSTERESIS (EN, EN_hys)
V
TH EN ON
EN pin threshold rising edge 1.16 1.20 1.24 V
V
TH EN OFF
EN pin threshold falling edge 3.0 V ≤ V
IN
≤ 17V 1.12 1.15 1.19 V
V
TH EN Hys
EN pin hysteresis 50 mV
I
IN EN
Input bias current into EN pin EN = 1.3V 0 50 nA
V
EN_hyst
EN_hys pin output low I
EN_hyst
= 1mA, EN = 1.1V 0.4 V
I
IN EN_hyst
Input bias current into EN_hyst pin EN_hyst = 1.3V 0 50 nA
POWER SWITCH
V
IN
= 3 V, I = 100mA 2.4 4
high-side MOSFET on-resistance
V
IN
= 12V, I = 100mA 1.5 2.6
R
DS(ON)
Ω
V
IN
= 3V, I = 100mA 0.75 1.3
low-side MOSFET on-resistance
V
IN
= 12V, I = 100mA 0.6 1
Switch current limit high-side
I
LIMF
V
IN
= 12V 600 750 900 mA
MOSFET
Thermal shutdown Increasing junction temperature 150 °C
T
SD
Thermal shutdown hysteresis Decreasing junction temperature 20 °C
OUTPUT
t
ONmin
Minimum ON time V
IN
= 5V, V
OUT
= 2.5 V 500 ns
t
OFFmin
Minimum OFF time V
IN
= 5 V 60 ns
(1) The part is functional down to the falling UVLO (Under Voltage Lockout) threshold
(2) Current into VIN pin
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