Datasheet

TPS62120
TPS62122
www.ti.com SLVSAD5 –JULY 2010
RECOMMENDED OPERATING CONDITIONS
MIN NOM MAX UNIT
Supply voltage VIN, device in operation 2 15 V
V
IN
= 2 V, V
OUT
= 1.8 V, DCR
L
= 0.7 Ω 25
Output current capability mA
V
IN
≥ 2.5 V, V
OUT
= 1.8 V, DCR
L
= 0.7 Ω 75
Effective inductance 10 22 33 µH
Effective output capacitance 1.0 2 33 µF
Output voltage range 1.2 5.5 V
Operating ambient temperature T
A
(1)
, (Unless Otherwise Noted) –40 85 °C
Operating junction temperature range, T
J
–40 125 °C
(1) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may
have to be derated. Maximum ambient temperature (T
A(max)
) is dependent on the maximum operating junction temperature (T
J(max)
), the
maximum power dissipation of the device in the application (P
D(max)
), and the junction-to-ambient thermal resistance of the part/package
in the application (q
JA
), as given by the following equation: T
A(max)
= T
J(max)
– (q
JA
× P
D(max)
).
ELECTRICAL CHARACTERISTICS
V
IN
= 8V, V
OUT
= 1.8V, EN = V
IN
, T
J
= –40°C to 85°C, typical values are at T
J
= 25°C (unless otherwise noted), C
IN
= 4.7µF,
L = 22µH, C
OUT
= 4.7µF, see Parameter Measurement Information
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY
V
IN
Input voltage range
(1)
Device operating 2 15 V
I
OUT
= 0mA, Device not switching, EN = VIN,
11 18 µA
regulator sleeps
I
Q
Quiescent current
I
OUT
= 0mA, Device switching, V
IN
= 8 V, V
OUT
=
13 µA
1.8V
V
IN
= 5.5 V = V
OUT
, T
J
= 25°C, high-side MOSFET
I
Active
Active mode current consumption 240 275 µA
switch fully turned on
I
SD
Shutdown current EN = GND, V
OUT
= SW = 0 V, V
IN
= 3.6V
(2)
0.3 1.2 µA
Falling V
IN
1.85 1.95 V
V
UVLO
Undervoltage lockout threshold
Rising V
IN
2.5 2.61 V
ENABLE, THRESHOLD
V
IH TH
Threshold for detecting high EN 2 V ≤ VIN ≤ 15V, rising edge 0.8 1.1 V
V
IL TH HYS
Threshold for detecting low EN 2 V ≤ VIN ≤ 15 V, falling edge 0.4 0.6 V
I
IN
Input bias current, EN EN = GND or V
IN
0 50 nA
POWER SWITCH
V
IN
= 3.6 V 2.3 3.4
high-side MOSFET on-resistance
R
DS(ON)
V
IN
= 8V 1.75 2.5
Ω
V
IN
= 3.6 V 1.3 2.5
low-side MOSFET on-resistance
V
IN
= 8V 1.2 1.75
Forward current limit MOSFET
I
LIMF
V
IN
= 8V, Open loop 200 250 400 mA
high-side
T
SD
Thermal shutdown Increasing junction temperature 150 °C
Thermal shutdown hysteresis Decreasing junction temperature 20 °C
(1) The typical required supply voltage for startup is 2.5V. The part is functional down to the falling UVLO (Under Voltage Lockout) threshold
(2) Shutdown current into VIN pin, includes internal leakage
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