Datasheet

TPS62110-HT
SLVSAO9B –DECEMBER 2010– REVISED FEBRUARY 2011 www.ti.com
ELECTRICAL CHARACTERISTICS
V
I
= 12 V, V
O
= 3.3 V, I
O
= 600 mA, EN = V
I
T
A
= -55°C to 125°C T
A
= 175°C
PARAMETER TEST CONDITIONS UNIT
MIN TYP MAX MIN TYP MAX
SUPPLY CURRENT
V
I
Input voltage range
(1)
3.1 17 3.1 17 V
I
O
= 0 mA, SYNC = GND, V
I
= 7.2 V,
20 32
T
A
= 25°C
(2)
I
(Q)
Operating quiescent current μA
I
O
= 0 mA, SYNC = GND,
23 30 35 70
V
I
= 17 V
(2)
EN = GND, V
I
= 12 V 1.5 5 9.5 45
I
(SD)
Shutdown current μA
EN = GND, V
I
= 17 V 1.5 6 10.2 45
ENABLE
V
IH
EN high-level input voltage 1.3 1.3 V
V
IL
EN low-level input voltage 0.3 0.3 V
EN trip-point hysteresis 170 170 mV
I
IKG
EN input leakage current EN = GND or V
I
, V
I
= 17 V 0.07 0.2 0.07 0.2 μA
I
(EN)
EN input current 0.6 V ≤ V
(EN)
≤ 4 V 10 5 μA
Undervoltage lockout
V
(UVLO)
Input voltage falling 2.8 3 3.1 2.8 3 3.1 V
threshold
Undervoltage lockout 225
250 mV
hysteresis
POWER SWITCH
P-channel MOSFET
r
DS(ON)
V
I
≥ 5.4 V, I
O
= 350 mA 165 250 165 325 mΩ
on-resistance
P-channel MOSFET leakage
V
DS
= 17 V 0.1 1 2 7 μA
current
P-channel MOSFET current
V
I
= 7.2 V, V
O
= 3.3 V 2400 2600 mA
limit
N-channel MOSFET
r
DS(ON)
V
I
≥ 5.4 V, I
O
= 350 mA 145 200 185 270 mΩ
on-resistance
N-channel MOSFET
leakage V
DS
= 17 V 0.1 3 2.1 18 μA
current
POWER GOOD OUTPUT, LBI, LBO
V
(PG)
Power good trip voltage V
O
– 1.6% V
O
– 1.6% V
V
O
ramping positive 50 57
Power good delay time μs
V
O
ramping negative 190 200
V
OL
PG, LBO output low voltage V
(FB)
= 1.1 × V
O
nominal, I
OL
= 1 mA 0.3 0.3 V
I
OL
PG, LBO sink current 1 1 mA
PG, LBO output leakage
V
(FB)
= V
O
nominal 0.01 0.25 0.01 0.25 μA
current
Minimum supply voltage for
valid power good, LBI, LBO 3 3 V
signal
Low battery input trip
V
LBI
Input voltage falling 1.256 1.260 V
voltage
ILBI LBI input leakage current 10 100 10 100 nA
Low battery input trip-point
1.5 1.5 %
accuracy
V
LBI,HYS
Low battery input hysteresis 25 25 mV
(1) Not production tested
(2) Device is not switching.
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