Datasheet

TPS62065, TPS62067
www.ti.com SLVS833B –MARCH 2010–REVISED NOVEMBER 2013
THERMAL INFORMATION
TPS62065
TPS62067
THERMAL METRIC
(1)
UNITS
DSG
8 PINS
θ
JA
Junction-to-ambient thermal resistance 65.3
θ
JC(top)
Junction-to-case(top) thermal resistance 74.2
θ
JB
Junction-to-board thermal resistance 35.4
°C/W
ψ
JT
Junction-to-top characterization parameter 2.2
ψ
JB
Junction-to-board characterization parameter 36.0
θ
JC(bottom)
Junction-to-case(bottom) thermal resistance 12.8
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
ELECTRICAL CHARACTERISTICS
Over full operating ambient temperature range, typical values are at T
A
= 25°C. Unless otherwise noted, specifications apply
for condition V
IN
= EN = 3.6V. External components C
IN
= 10μF 0603, C
OUT
= 10μF 0603, L = 1.0μH, see the parameter
measurement information.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY
V
IN
Input voltage range 2.9 6 V
I
OUT
= 0 mA, device operating in PFM mode
I
Q
Operating quiescent current 18 μA
and not device not switching
I
SD
Shutdown current EN = GND, current into AVIN and PVIN combined 0.1 1 μA
Falling 1.73 1.78 1.83
V
UVLO
Undervoltage lockout threshold V
Rising 1.9 1.95 1.99
ENABLE, MODE
V
IH
High level input voltage 2.9 V ≤ V
IN
≤ 6 V 1.0 6 V
V
IL
Low level input voltage 2.9 V ≤ V
IN
≤ 6 V 0 0.4 V
I
IN
Input bias current EN, Mode tied to GND or AVIN 0.01 1 μA
POWER GOOD OPEN DRAIN OUTPUT
Rising feedback voltage 93% 95% 98%
V
THPG
Power good threshold voltage
Falling feedback voltage 87% 90% 92%
I
OUT
= –1mA; must be limited by external pullup 0.3
V
OL
Output low voltage V
resistor
(1)
Voltage applied to PG pin via external pullup V
IN
V
H
Output high voltage V
resistor
I
LKG
Leakage current into PG pin V
(PG)
= 3.6V 100 nA
t
PGDL
Internal power good delay time 5 µs
POWER SWITCH
V
IN
= 3.6 V
(1)
120 180
R
DS(on)
High-side MOSFET on-resistance mΩ
V
IN
= 5.0 V
(1)
95 150
V
IN
= 3.6 V
(1)
90 130
R
DS(on)
Low-side MOSFET on-resistance mΩ
V
IN
= 5.0 V
(1)
75 100
Forward current limit MOSFET
I
LIMF
2.9V ≤ V
IN
≤ 6 V 2300 2750 3300 mA
high-side and low-side
Thermal shutdown Increasing junction temperature 150
T
SD
°C
Thermal shutdown hysteresis Decreasing junction temperature 10
OSCILLATOR
f
SW
Oscillator frequency 2.9 V ≤ V
IN
≤ 6 V 2.6 3 3.4 MHz
OUTPUT
(1) Maximum value applies for T
J
= 85°C
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