Datasheet

TPS62061, TPS62063
TPS62060
www.ti.com SLVSA95A –MARCH 2010– REVISED JANUARY 2011
RECOMMENDED OPERATING CONDITIONS
MIN NOM MAX UNIT
AV
IN
, Supply voltage 2.7 6 V
PV
IN
Output current capability 1600 mA
Output voltage range for adjustable voltage 0.8 VIN V
L Effective Inductance Range 0.7 1.0 1.6 µH
C
OUT
Effective Output Capacitance Range 4.5 10 22 µF
T
A
Operating ambient temperature
(1)
–40 85 °C
T
J
Operating junction temperature –40 125 °C
(1) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may
have to be derated. Maximum ambient temperature (T
A(max)
) is dependent on the maximum operating junction temperature (T
J(max)
), the
maximum power dissipation of the device in the application (PD(max)), and the junction-to-ambient thermal resistance of the
part/package in the application (θ
JA
), as given by the following equation: T
A(max
)= T
J(max)
–(θ
JA
X P
D(max)
)
ELECTRICAL CHARACTERISTICS
Over full operating ambient temperature range, typical values are at T
A
= 25°C. Unless otherwise noted, specifications apply
for condition V
IN
= EN = 3.6V. External components C
IN
= 10μF 0603, C
OUT
= 10μF 0603, L = 1.0μH, see the parameter
measurement information.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY
V
IN
Input voltage range 2.7 6 V
I
OUT
= 0 mA, device operating in PFM mode
I
Q
Operating quiescent current 18 25 μA
and not device not switching
I
SD
Shutdown current EN = GND, current into AVIN and PVIN 0.1 1 μA
Falling 1.73 1.78 1.83
V
UVLO
Undervoltage lockout threshold V
Rising 1.9 1.95 1.99
ENABLE, MODE
V
IH
High level input voltage 2.7 V ≤ V
IN
≤ 6 V 1.0 6 V
V
IL
Low level input voltage 2.7 V ≤ V
IN
≤ 6 V 0 0.4 V
I
IN
Input bias current Pin tied to GND or VIN 0.01 1 μA
POWER SWITCH
V
IN
= 3.6 V
(1)
120 180
R
DS(on)
High-side MOSFET on-resistance mΩ
V
IN
= 5.0 V
(1)
95 150
V
IN
= 3.6 V
(1)
90 130
R
DS(on)
Low-side MOSFET on-resistance mΩ
V
IN
= 5.0 V
(1)
75 100
Forward current limit MOSFET
I
LIMF
2.7V ≤ V
IN
≤ 6 V 1800 2250 2700 mA
high-side and low-side
Thermal shutdown Increasing junction temperature 150
T
SD
°C
Thermal shutdown hysteresis Decreasing junction temperature 10
OSCILLATOR
f
SW
Oscillator frequency 2.7 V ≤ V
IN
≤ 6 V 2.6 3 3.4 MHz
(1) Maximum value applies for T
J
= 85°C
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