Datasheet

   
    
     
SGLS243A − APRIL 2004 − REVISED JUNE 2008
8
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
electrical characteristics over recommended operating free-air temperature range, V
I
= 3.6 V,
V
O
= 2.5 V, I
O
= 300 mA, EN = V
IN
, ILIM = V
IN
, T
J
= −40°C to 125°C (unless otherwise noted) (continued)
power switch and current limit
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
P-channel MOSFET on-resistance
V
I
= V
GS
= 3.6 V, I = 200 mA 150 280 600
m
P-channel MOSFET on-resistance
V
I
= V
GS
= 2 V, I = 200 mA 480
m
r
DS(on)
P-channel leakage current V
DS
= 5.5 V 1 µA
r
DS(on)
N-channel MOSFET on-resistance
V
I
= V
GS
= 3.6 V, I
O
= 200 mA 150 280 600
m
N-channel MOSFET on-resistance
V
I
= V
GS
= 2 V, I
O
= 200 mA 500
m
N-channel leakage current V
DS
= 5.5 V 1 µA
I
(LIM)
P-channel current limit
2.5 V V
I
5.5 V, ILIM = V
IN
800 1200 1600
mA
I
(LIM)
P-channel current limit
2 V V
I
5.5 V, ILIM = GND
390 600 900
mA
V
IH
ILIM high-level input voltage 1.3 V
V
IL
ILIM low-level input voltage 0.4 V
I
lkg
ILIM input leakage current ILIM = GND or V
IN
0.01 0.1 µA
power good output (see Note 3)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
(PG)
Power good threshold Feedback voltage falling
88%
V
O
92%
V
O
94%
V
O
V
Power good hysteresis 2.5% V
O
V
V
OL
PG output low voltage V
(FB)
= 0.8 × V
O
nominal, I
(sink)
= 10 µA 0.3 V
I
lkg
PG output leakage current V
(FB)
= V
O
nominal 0.01 1 µA
Minimum supply voltage for valid power good signal 1.2 V
NOTE 3: Power good is not valid for the first 100 µs after EN goes high. Please refer to the application section for more information.
oscillator
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
f
s
Oscillator frequency 500 750 1000 kHz
f
(SYNC)
Synchronization range CMOS-logic clock signal on SYNC pin 500 1000 kHz
V
IH
SYNC high level input voltage 1.3 V
V
IL
SYNC low level input voltage 0.4 V
I
lkg
SYNC input leakage current SYNC = GND or V
IN
0.01 0.1 µA
Duty cycle of external clock signal 20% 60%