Datasheet

TPS61240, TPS61241
www.ti.com SLVS806B –APRIL 2009– REVISED FEBRUARY 2012
RECOMMENDED OPERATING CONDITIONS
MIN NOM MAX UNIT
V
IN
Input voltage range 2.3 5.5 V
L Inductance 0.4 1 1.5 µH
TPS61240
1 20 µF
TPS61241
C
O
Output capacitance
TPS61242 0.8 10 µF
T
A
Operating ambient temperature –40 85 °C
T
J
Operating junction temperature –40 125 °C
ELECTRICAL CHARACTERISTICS
Over full operating ambient temperature range, typical values are at T
A
= 25°C. Unless otherwise noted, specifications apply
for condition V
IN
= EN = 3.6V. External components C
IN
= 2.2μF, C
OUT
= 4.7μF 0603, L = 1μH, refer to PARAMETER
MEASUREMENT INFORMATION.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
DC/DC STAGE
V
IN
Input voltage range 2.3 5.5 V
V
OUT
Fixed output voltage range 2.3 V ≤ V
IN
≤ 5.5 V, 0 mA ≤ I
OUT
≤ 200 mA 4.9 5.0 5.1 V
V
O_Ripple
Ripple voltage, PWM mode I
LOAD
= 150 mA 20 mVpp
Output current V
IN
2.3 V to 5.5 V 200 mA
V
OUT
= V
GS
= 5.0 V (TPS61240) 500 600
Switch valley current limit mA
V
OUT
= V
GS
= 5.0 V (TPS61241, TPS61242) 600 700
Short circuit current V
OUT
= V
GS
= 5.0 V 200 350 mApk
High side MOSFET on-resistance
(1)
V
IN
= V
GS
= 5.0V, T
A
= 25°C
(1)
290 mΩ
Low Side MOSFET on-resistance
(1)
V
IN
= V
GS
= 5.0 V, T
A
= 25°C
(1)
250 mΩ
Operating quiescent current I
OUT
= 0 mA, Power save mode 30 40 μA
I
SW
Shutdown current EN = GND 1.5 μA
Reverse leakage current V
OUT
EN = 0, V
OUT
= 5 V 2.5 μA
Leakage current from battery to
EN = GND 2.5 μA
V
OUT
V
IN
600 mVp-p AC square wave, 200Hz,
Line transient response ±25 ±50 mVpk
12.5% DC at 50/200mA load
0–50 mA, 50–0 mA V
IN
= 3.6V T
Rise
= T
Fall
= 0.1μs 50
Load transient response mVpk
50–200 mA, 200–50 mA, V
IN
= 3.6 V, T
Rise
= T
Fall
= 0.1μs 150
I
IN
Input bias current, EN EN = GND or V
IN
0.01 1.0 μA
Falling 2.0 2.1 V
V
UVLO
Undervoltage lockout threshold
Rising 2.1 2.2 V
CONTROL STAGE
V
IH
High level input voltage, EN 2.3 V ≤ V
IN
≤ 5.5 V 1.0 V
V
IL
Low level input voltage, EN 2.3 V ≤ V
IN
≤ 5.5 V 0.4 V
Falling 5.9
OVC Input over-voltage threshold V
Rising 6.0
Time from active EN to start switching, no-load until V
OUT
t
Start
Start-up time 300 μs
is stable 5V
DC/DC STAGE
Freq See Figure 7 (Frequency Dependancy vs I
OUT
) 3.5 MHz
Thermal shutdown Increasing junction temperature 140 °C
T
SD
Thermal shutdown hysteresis Decreasing junction temperature 20 °C
(1) DRV package has an increased R
DSon
of about 40mΩ due to bond wire resistance.
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