Datasheet

TPS61180/1/2
SLVS801E –DECEMBER 2007–REVISED APRIL 2013 www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
V
BAT
= 10.8 V, 0.1 μF at Cin, EN = Logic High, IFB current = 15m A, IFB voltage = 500 mV, T
A
= –40°C to 85°C, typical
values are at T
A
= 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
start_r
Isolation FET start up threshold V
IN
–V
O
, V
O
ramp up 1.2 2 V
I
LN_NFET
PWM FET leakage current V
SW
= 35 V, T
A
= 25°C 1 μA
OSCILLATOR
TPS61182 1.2 1.3 1.5
f
S
Oscillator frequency MHz
TPS61180/1 0.9 1.0 1.2
D
max
Maximum duty cycle IFB = 0 V 85 94 %
TPS61182 8
D
min
Minimum duty cycle %
TPS61180/1 7
OS, SC, OVP AND SS
I
LIM
N-Channel MOSFET current limit D = D
max
1.5 3 A
V
ovp
V
O
overvoltage threshold Measured on the V
O
pin 38 39 40 V
V
ovp_IFB
IFB overvoltage threshold Measured on the IFBx pin 15 17 20 V
V
sc
Short circuit detection threshold V
IN
-V
O
, V
O
ramp down 1.7 2.5 V
V
sc_dly
Short circuit detection delay during start up 32 ms
V
IFB_nouse
IFB no use detection threshold TPS61180 Only 0.6 V
Fault OUTPUT
V
fault_high
Fault high voltage Measured as V
bat
–V
Fault
0.1 V
V
fault_low
Fault low voltage Measured as V
bat
–V
Fault
, sink 0.1mA, Vin 6 8 10 V
= 15 V
THERMAL SHUTDOWN
T
shutdown
Thermal shutdown threshold 160 °C
T
hysteresis
Thermal shutdown threshold hysteresis 15 °C
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