Datasheet

L1
10 Hm
Q1
D2
D1
C2
4.7 Fm
IFB1
IFB2
IFB3
IFB4
IFB5
IFB6
V
O
SWFault
V
BAT
Cin
EN
DCTRL
ISET
PGND
GND
R1
62kW
TPS61181/2
C4
0.1 Fm
Optional
5 Vto 24 V
C1
4.7 Fm
10 WLEDinseries
,
120 mA total
EN
PWMDimming
R2
51Ω
C3
1 Fm
R3
100kW
TPS61180/1/2
SLVS801E –DECEMBER 2007–REVISED APRIL 2013 www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
Figure 1. TPS61181/2 TYPICAL APPLICATION
ORDERING INFORMATION
(1)
PACKAGE IC SUPPLY SWITCHING FREQUENCY PACKAGE MARKING
(TYP)
TPS61180RTE External 3.3 V 1.0 MHz CCG
TPS61181RTE Built-in LDO 1.0 MHz CCH
TPS61182RTE Built-in LDO 1.3 MHz CCI
(1) For the most current package and ordering information, see the Package Option Addendum at the end
of this document, or see the TI website at www.ti.com.
2 Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: TPS61180/1/2