Datasheet
TPS61181A
www.ti.com
SLVSAN6A –FEBRUARY 2011– REVISED MARCH 2011
ELECTRICAL CHARACTERISTICS
V
BAT
= 10.8 V, 0.1 μF at Cin, EN = Logic High, IFB current = 20 mA, IFB voltage = 500 mV, T
A
= –40°C to 85°C, typical
values are at T
A
= 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENT
V
BAT
Battery input voltage range 4.5 24 V
V
cin
Cin pin output voltage 2.7 3.15 3.6 V
I
q_bat
Operating quiescent current into V
BAT
Device enable, switching no load, Vin = 3 mA
24 V
I
Q_sw
Operating quiescent current into V
O
V
O
= 35V 60 μA
I
SD
Shutdown current EN=GND 2 18 μA
V
bat_UVLO
V
BAT
under-voltage lockout threshold V
BAT
rising 4.45 V
V
BAT
falling 3.9
V
bat_hys
V
BAT
under-voltage lockout hysteresis V
BAT
rising – V
BAT
falling 220 mV
EN AND DCTRL
V
H
EN pin logic high voltage 2.0 V
V
L
EN pin logic low voltage 0.8 V
V
H
DCTRL pin logic high voltage 2.0 V
V
L
DCTRL pin logic low voltage 0.8 V
R
PD
Pull down resistor on both pins V
EN, DCTRL
= 2V 400 800 1600 kΩ
CURRENT REGULATION
V
ISET
ISET pin voltage 1.204 1.229 1.253 V
K
ISET
Current multiple Iout/ISET ISET current = 20 μA 970 1000 1030
IFB Current accuracy ISET current = 20 µA 19.4 20 20.6 mA
K
m
(I
max
–I
min
)/I
AVG
ISET current = 20 μA 1 2.5 %
I
leak
IFB pin leakage current IFB voltage = 20 V on all pins 3 μA
I
IFB_MAX
Current sink max output current IFB = 500 mV 30 mA
BOOST OUTPUT REGULATION
V
IFB_L
V
O
dial up threshold ISET current = 20 μA 400 mV
V
IFB_H
V
O
dial down threshold ISET current = 20 μA 700 mV
V
reg_L
Min Vout regulation voltage 16 V
V
o_step
V
O
stepping voltage 100 150 mV
POWER SWITCH
R
PWM_SW
PWM FET on-resistance 0.2 0.45 Ω
R
start
Start up charging resistance V
O
= 0 V 100 300 Ω
V
start_r
Isolation FET start up threshold V
IN
–V
O
, V
O
ramp up 1.2 2 V
I
LN_NFET
PWM FET leakage current V
SW
= 35 V, T
A
= 25°C 1 μA
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